WMB090DN04LG2

WAYON
WMB090DN04LG2 40V Dual N-Channel Enhancement Mode Power MOSFET Description D1 WMB090DN04LG2 uses Wayon's 2nd generation power trench D2 D1 D2 D2 MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S1 This device is well suited for high efficiency fast switching applications. D1 D1 G2 G2 S2 S1 G1 PDF...
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Аналоги 3

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Тип Наименование Корпус Упаковка i Карточка
товара
P= CJAC20N06D (JSCJ)
 
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P= YJGD20G10A (YJ)
 
— 982 шт
 
P= NCEP40ND80G (NCE)
 
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WMB090DN04LG2 40V Dual N-Channel Enhancement Mode Power MOSFET Description D1 WMB090DN04LG2 uses Wayon's 2nd generation power trench D2 D1 D2 D2 MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S1 This device is well suited for high efficiency fast switching applications. D1 D1 G2 G2 S2 S1 G1 PDFN5060-8L Features  S2 G1 D2 VDS = 40V, ID = 45A RDS(on) < 10.5mΩ @ VGS = 10V RDS(on) < 16mΩ @ VGS = 4.5V  Green Device Available  100% EAS Guaranteed  Low Gate Charge  High Speed Switching RoHS D1 D1 D2 D2 8 7 6 5 compliant Applications  Synchronous Rectification  DC/DC Converter  Power Management Switches 1 2 3 4 S1 G1 S2 G2 Absolute Maximum Ratings（TA = 25°C, unless otherwise noted） Parameter Symbol Value Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC=25°C TC=100°C ID 45 28.5 A IDM 180 A EAS 4.05 mJ PD 31.6 W TJ , TSTG -55 to 150 °C Symbol Value Unit Thermal Resistance from Junction-to-Ambient3 RθJA 58 °C/W Thermal Resistance from Junction-to-Case RθJC 3.95 °C/W Pulsed Drain Current1 Single Pulse Avalanche Energy2 Total Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Rev.1.0, 2022 Doc:W0803754 1/7 PDF
Документация на WMB090DN04LG2 

Shang Hai Wayon Thermo-Electro

Дата модификации: 04.11.2022

Размер: 621.6 Кб

7 стр.

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