Серия биполярных транзисторов LBC856

Общие характеристики

	Раздел	Биполярный транзистор
	Тип проводимости и конфигурация
	Напряжение КЭ максимальное
	Ток коллектора
	Граничная рабочая частота
	Корпус	SOT-323-3

Документация на серию LBC856

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G Series S-LBC857CLT1G Series PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with 3 RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 2 SOT–23 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V Emitter–Base Voltage VEBO –5.0 V IC –100 mAdc Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W LBC856 LBC857 LBC858, LBC859 LBC856 LBC857 LBC858, LBC859 Collector Current – Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board, (Note 1.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 3 COLLECT OR 1 B ASE 2 EMIT T ER MARKING DIAGRAM 3 PD RqJA PD 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg –55 to +150 °C xx 2 1 xx= Device Marking (See Table Below) 1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Rev.O 1/7

Документация на LBC856ALT1G

Дата модификации: 27.08.2012

Размер: 159.5 Кб

7 стр.

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Товары серии LBC856

Наименование	i	Упаковка	P_расс	U_КЭ(пад)	h 21
LBC856ALT1G (LRC)
LBC856BDW1T1G (LRC)		в ленте 3000 шт
LBC856BLT1G (LRC)		в ленте 3000 шт
LBC856BWT1G (LRC)