IRF7343TRPBF

VBsemi Electronics Co.
IRF7343TRPBF www.VBsemi.tw N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested ID (A)a Qg (Typ.) RDS(on) (Ω) 0.028 at VGS = 10 V 5.3 0.031 at VGS = 4.5 V 4.7 0.050 at VGS = - 10 V - 4.9 0.060 at VGS = - 4.5 V - 4.5 6 nC APPLICATI...
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  • Истор. имя: IRF7343TRPBF (INFIN)
  • Корпус:
  • Норма упаковки: 4000  шт. (в ленте)

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Тип Наименование Корпус Упаковка i Карточка
товара
P= CJQ4559 (JSCJ)
 
SO-8 SOIC8
 
P= IRF7343TR (YOUTAI)
 

IRF7343TR (INFIN)
SO-8 SOIC8 в ленте 3000 шт
 

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IRF7343TRPBF www.VBsemi.tw N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested ID (A)a Qg (Typ.) RDS(on) (Ω) 0.028 at VGS = 10 V 5.3 0.031 at VGS = 4.5 V 4.7 0.050 at VGS = - 10 V - 4.9 0.060 at VGS = - 4.5 V - 4.5 6 nC APPLICATIONS 8 nC • CCFL Inverter D1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G2 G1 S1 D2 N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 60 - 60 Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C 5.3 - 4.9 4.3 - 4.2 4.3b, c - 4.0b, c 3.4b, c 20 - 3.4b, c - 25 2.6 - 2.8 1.7b, c 20 - 1.7b, c - 25 IAS 11 15 EAS 6.1 11 3.1 3.4 ID TA = 70 °C IDM Pulsed Drain Current (10 µs Pulse Width) Source Drain Current Diode Current TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy IS ISM Pulsed Source-Drain Current Single Pulse Avalanche Current L = 0.1 mH TC = 25 °C Maximum Power Dissipation V ± 20 TC = 70 °C TA = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C 2 2.2 2b, c 1.3b, c 1.3b, c TJ, Tstg Operating Junction and Storage Temperature Range A mJ 2b, c PD Unit W - 55 to 150 °C THERMAL RESISTANCE RATINGS N-Channel Parameter P-Channel Symbol Typ. Max. Typ. Max. Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 55 62.5 53 62.5 Maximum Junction-to-Foot (Drain) Steady State RthJF 33 40 30 37 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 110 °C/W for N-Channel and P-Channel. E-mail:China@VBsemi TEL:86-755-83251052 1 PDF
Документация на IRF7343TRPBF 

Дата модификации: 09.05.2020

Размер: 1.22 Мб

14 стр.

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