IRF7313TR
VBsemi Electronics Co.
IRF7313TR
www.VBsemi.tw
Dual N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
ID (A)
0.022 at VGS = 10 V
6.8
0.026 at VGS = 4.5 V
6.0
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % UIS Tested
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
15 nC
APPLICATIONS
• Set Top Box
• Low Current DC/DC
S...
развернуть ▼ свернуть ▲ - Истор. имя: IRF7313TR (INFIN)
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- Норма упаковки: 4000 шт.
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IRF7313TR
www.VBsemi.tw
Dual N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
ID (A)
0.022 at VGS = 10 V
6.8
0.026 at VGS = 4.5 V
6.0
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % UIS Tested
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
15 nC
APPLICATIONS
• Set Top Box
• Low Current DC/DC
SO-8
D1
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
5
D2
G2
4
D2
G1
G2
Top View
S1
S2
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
ID
TC = 25 °C
TA = 25 °C
IS
L = 0.1 mH
IAS
EAS
TC = 25 °C
TC = 70 °C
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Unit
V
6.8a
5.6
6.2b, c
5.2b, c
30
2.25
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
Limit
30
± 20
A
1.48b, c
5
mJ
1.25
2.7
1.77
1.78b, c
1.14b, c
- 55 to 150
PD
TJ, Tstg
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Package limited, TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
E-mail:China@VBsemi TEL:86-755-83251052
Symbol
RthJA
RthJF
Typical
58
Maximum
70
38
45
Unit
°C/W
PDF
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