SS310

Taiwan Semiconductor
Диод выпрямительный одиночный на напряжение до 100 В, ток до 3 А, с падением напряжения 790 мВ, производства Taiwan Semiconductor (TSC)
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Технические характеристики

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Корпус DO214AB
Схема включения диодов
Максимальное обратное напряжение диода
Прямой ток диода (средний)
Прямое падение напряжения
Рабочая температура
  Примечание: Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-214AB
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Аналоги 5

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Тип Наименование Корпус Упаковка i Сборка Uобр Iпрям Uпрям Особенности Iобр t ов Сперех T раб Монтаж Примечание Карточка
товара
A- SS310 (YJ)
 
DO214AB в ленте 3000 шт
 
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-214AB
A- SS310Q (YJ)
 
DO214AB
 
A- SS510 (YJ)
 
DO214AB в ленте 3000 шт
 
Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, DO-214AB
A- SSL510 (YJ)
 
DO214AB в ленте 3000 шт
 
A- SK310 (DC)
 
DO214AB в ленте 3000 шт Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-214AB

Файлы 2

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SS32 – SS320 Taiwan Semiconductor 3A, 20V - 200V Schottky Barrier Surface Mount Rectifier FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Low power loss, high efficiency Ideal for automated placement Guard ring for overvoltage protection High surge current capability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS ● ● ● ● PARAMETER VALUE UNIT IF 3 A VRRM 20 - 200 V IFSM 75, 100 A TJ MAX 125, 150 °C Package DO-214AB (SMC) Configuration Single die Switching mode power supply (SMPS) Adapters Lighting application Converter MECHANICAL DATA ● ● ● ● ● ● Case: DO-214AB (SMC) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.210g (approximately) DO-214AB (SMC) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SS 32 SS 32 SS 33 SS 33 SS 34 SS 34 SS 35 SS 35 SS 36 SS 36 SS 39 SS 39 SS 310 SS 310 SS 315 SS 315 SS UNIT 320 SS 320 VRRM 20 30 40 50 60 90 100 150 200 V VR(RMS) 14 21 28 35 42 63 70 105 140 V SYMBOL Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load Critical rate of rise of offstate voltage Junction temperature Storage temperature IF IFSM 3 100 75 dV/dt TJ A 10,000 - 55 to +125 TSTG V/µs - 55 to +150 - 55 to +150 1 A °C °C Version: O2102 PDF
Документация на SS310 

Дата модификации: 12.03.2021

Размер: 446.1 Кб

7 стр.

SS32 thru SS320 Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Schottky Barrier Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-214AB (SMC) DO-214AB (SMC) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.21 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) SYMBOL PARAMETER SS SS SS SS SS SS SS SS SS 32 33 34 35 36 39 310 315 320 Unit Maximum repetitive peak reverse voltage VRRM 20 30 40 50 60 90 100 150 200 V Maximum RMS voltage VRMS 14 21 28 35 42 63 70 105 140 V Maximum DC blocking voltage VDC 20 30 40 50 60 90 100 150 200 V Maximum average forward rectified current IF(AV) Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 100 VF 0.5 0.4 Maximum instantaneous forward voltage (Note 1) IF= 3 A @ 25℃ IF= 3 A @ 100℃ Maximum reverse current @ rated VR TJ=25 ℃ TJ=100℃ TJ=125 ℃ 3 0.75 0.65 0.85 0.70 0.5 IR 10 5 - - - 0.5 10000 Typical thermal resistance RθJL RθJA 17 55 Storage temperature range TSTG - 55 to +125 V 0.95 0.80 0.1 dV/dt TJ A 70 Voltage rate of change (Rated VR) Operating junction temperature range A mA V/μs O - 55 to +150 - 55 to +150 C/W O C O C Note 1: Pulse test with PW=300μs, 1% duty cycle Document Number: D1307006 Version: J13 PDF
Документация на SS310 

SS32 SERIES_J13.xls

Дата модификации: 07.02.2016

Размер: 207.9 Кб

5 стр.

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