P6SMB100A

Taiwan Semiconductor
P6SMB6.8(A) – P6SMB220(A) Taiwan Semiconductor 600W, 6.8V - 220V Surface Mount Transient Voltage Suppressor FEATURES ● ● ● ● ● ● ● ● ● ● KEY PARAMETERS Low profile package Ideal for automated placement Glass passivated chip junction Excellent clamping capability Typical IR less than 1μA above 10V Fast response time: Typically less than 1.0ps from 0 volt to BV min Meets ISO 7637-2 (Pulse 1/2a...
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Тип Наименование Корпус Упаковка i Pрасс Pрасс(пик) Uраб Uогр(ном) Uогр(диапазон) Uимп(макс) Iраб Iимп(макс) Тип Линий Cперех Примечание Карточка
товара
P= P6SMB100A (YJ)
 
DO214AA 3000 шт
 
 — — Trans Voltage Suppressor Diode, 600W, 85.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA

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P6SMB6.8(A) – P6SMB220(A) Taiwan Semiconductor 600W, 6.8V - 220V Surface Mount Transient Voltage Suppressor FEATURES ● ● ● ● ● ● ● ● ● ● KEY PARAMETERS Low profile package Ideal for automated placement Glass passivated chip junction Excellent clamping capability Typical IR less than 1μA above 10V Fast response time: Typically less than 1.0ps from 0 volt to BV min Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VWM 5.5 - 185 V VBR 6.8 - 220 V PPPSM 600 W TJ MAX 150 °C Package DO-214AA (SMB) Configuration Single die APPLICATIONS ● ● ● ● Switching mode power supply (SMPS) Adapters TV Monitor MECHANICAL DATA ● ● ● ● ● ● Case: DO-214AA (SMB) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.090g (approximately) DO-214AA (SMB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Non-repetitive peak impulse power dissipation with (1) 10/1000μs waveform Steady state power dissipation at TA = 25°C Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load SYMBOL VALUE UNIT PPPSM 600 W Ptot 3 W IFSM 100 A Forward Voltage @ IF = 50A for Uni-directional only VF 3.5 / 5.0 V Junction temperature TJ -55 to +150 °C (2) TSTG -55 to +150 Storage temperature Notes: 1. Non-repetitive current pulse per Fig.3 and derated above TA = 25°C per Fig.2 2. VF = 3.5V on P6SMB6.8 - P6SMB91 device and VF = 5.0V on P6SMB100 - P6SMB220 device. °C Devices for Bipolar Applications 1. For bidirectional use C or CA suffix for types P6SMB6.8 - types P6SMB220A 2. Electrical characteristics apply in both directions 1 Version: P2102 PDF
Документация на P6SMB100A 

Дата модификации: 05.03.2021

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