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CS630A8H

CR Micro
Silicon N-Channel Power MOSFET R ○ CS630 A8H General Description： 200 V ID 9 A VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 83 W which reduce the conduction loss, improve switching RDS(ON)Typ 0.23 Ω CS630 A8H, the silicon VDSS N-channel Enhanced performance and enhance the avalanche energy. The transistor can be used in various power switching...
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  • Корпус: TO220AB
  • Норма упаковки: 1000  шт.

Аналоги 3

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Silicon N-Channel Power MOSFET R ○ CS630 A8H General Description： 200 V ID 9 A VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 83 W which reduce the conduction loss, improve switching RDS(ON)Typ 0.23 Ω CS630 A8H, the silicon VDSS N-channel Enhanced performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤0.28Ω) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS Drain-to-Source Voltage Rating Units 200 V 9 A 5.5 A 36 A Gate-to-Source Voltage ±30 V Single Pulse Avalanche Energy 460 mJ Avalanche Energy ,Repetitive 50 mJ Avalanche Current 3.2 A Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation 83 W 0.67 W/℃ 150，–55 to 150 ℃ 300 ℃ Continuous Drain Current ID IDM Continuous Drain Current T C = 100 °C a1 Pulsed Drain Current VGS a2 EAS EAR IAR a1 a1 dv/dt a3 PD Derating Factor above 25°C TJ，T stg Operating Junction and Storage Temperature Range TL Maximum Temperature for Soldering W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 1 of 10 2 0 1 5 V0 1 PDF
Документация на CS630A8H 

CS630%20A8H[1]

Дата модификации: 08.12.2015

Размер: 715.4 Кб

10 стр.

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