MBR10200

Anbon
MBR1040 THRU MBR10200 10A High Barrier Power Schottky Rectifiers - 40V-200V Features • 150°C operating junction temperature. • Low power loss, high efficiency. • High current capability • High surge capability. • Guardring for overvoltage protection. • Low stored charge majority carrier conduction • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental sta...
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  • Корпус: TO220AC

Аналоги 2

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Тип Наименование Корпус Упаковка i Карточка
товара
P= MBR20200CT (YJ)
 
TO220AB в линейках 1000 шт
 
P= SBD20200CT (JSCJ)
 
TO2203L
 

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MBR1040 THRU MBR10200 10A High Barrier Power Schottky Rectifiers - 40V-200V Features • 150°C operating junction temperature. • Low power loss, high efficiency. • High current capability • High surge capability. • Guardring for overvoltage protection. • Low stored charge majority carrier conduction • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of Package outline TO-220AC 0.419(10.66) 0.387(9.85) 0.196(5.00) 0.163(4.16) 0.054(1.39) 0.045(1.15) 0.269(6.85) 0.226(5.75) MIL-STD-19500 /228 • Suffix "-H" indicates Halogen-free parts, ex. ΜΒR1040-H. 0.624(15.87) 0.548(13.93) 0.139(3.55) MIN Mechanical data 0.177(4.50)MAX • Epoxy : UL94-V0 rated flame retardant • Case : JEDEC TO-220AC molded plastic body over 0.038(0.96) 0.019(0.50) 0.50(12.70)MIN passivated chip • Lead : Axial leads, solderable per MIL-STD-202, 0.1(2.54) .025(0.65)MAX Method 208 guranteed • Polarity: As marked • Mounting Position : Any Dimensions in inches and (millimeters) Maximum ratings and Electrical Characteristics (AT PARAMETER CONDITIONS Forward rectified current See Fig.1 Forward surge current 8.3ms single half sine-wave (JEDEC methode) V R = V RRM T J = 25 OC Reverse current V R = V RRM T J = 125 OC Storage temperature range SYMBOLS *1 V RRM (V) Symbol *3 VR (V) MBR1040 40 28 40 MBR1045 45 31.5 45 MBR1050 50 35 50 MBR1060 60 42 60 MBR1080 80 56 80 MBR10100 100 70 100 MBR10150 150 105 150 MBR10200 200 140 200 http://www.anbonsemi.com TEL:886-755-23776891 FAX:886-755-81482182 *4 VF (V) TYP. MAX. UNIT IO 10.0 A I FSM 150 A 0.1 IR T STG V RMS*2 (V) MIN. mA 15 RθJC Junction to case Thermal resistance T A=25 oC unless otherwise noted) O 2.0 +175 -65 C/W O C Operating temperature T J, ( OC) *1 Repetitive peak reverse voltage 0.70 *2 RMS voltage 0.80 *3 Continuous reverse voltage -55 to +150 *4 Maximum forward voltage, @I F =10A, 25°C 0.85 0.95 Page 1 Document ID Issued Date Revised Date Revision Page. AS-3060039 2003/03/08 2012/05/16 D 3 PDF
Документация на MBR10200 

MBR1040 THRU MBR10200 TO-220AC

Дата модификации: 12.01.2016

Размер: 1.71 Мб

3 стр.

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