Серия биполярных транзисторов LMBTA55

Общие характеристики

	Раздел	Биполярный транзистор
	Тип проводимости и конфигурация
	Рассеиваемая мощность
	Напряжение КЭ максимальное
	Напряжение падения КЭ в открытом состоянии
	Ток коллектора
	Граничная рабочая частота
	Коэффициент усиления по току

Документация на серию LMBTA55

LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G We declare that the material of product compliance with RoHS requirements. 3 1 2 MAXIMUM RATINGS Rating Symbol Value LMBTA55 LMBTA56 Collector–Emitter Voltage V CEO –60 –80 Vdc Collector–Base Voltage V CBO –60 –80 Vdc Emitter–Base Voltage V Collector Current — Continuous EBO IC CASE 318–08, STYLE 6 SOT–23 (TO–236AB) Unit –4.0 Vdc –500 mAdc 3 COLLECTOR 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 225 mW R θJA PD 1.8 556 300 mW/°C °C/W mW R θJA T J , T stg 2.4 417 –55 to +150 mW/°C °C/W °C Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING LMBTA55LT1G = 2H; LMBTA56 LT1G = 2GM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (3) (I C = –1.0 mAdc, I B= 0 ) V LMBTA55 LMBTA56 Emitter–Base Breakdown Voltage V Vdc (BR)CEO (BR)EBO –60 –80 — — –4.0 — Vdc — –0.1 µAdc (I E = –100 µAdc, I C = 0 ) Collector Cutoff Current ( V CE = –60Vdc, I B = 0) Collector Cutoff Current ( V CB = –60Vdc, I E= 0) LMBTA55 — –0.1 ( V CB = –80Vdc, I E= 0) LMBTA56 — –0.1 I CES µAdc I CBO 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%. Rev.O 1/3  PDF

Документация на LMBTA55LT1G 

a1

Дата модификации: 27.08.2012

Размер: 84.7 Кб

3 стр.

• найти LMBTA55.pdf

Товары серии LMBTA55