IRLR8726TR

UMW
UMW R IRLR8726 N-Channel MOSFET Features l V DS (V)=30V l RDS(ON) RDS(ON) l 5.8m 8 m (VGS = 10V) (VGS = 4.5V) Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l l l Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Charact...
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  • Норма упаковки: 1000  шт. (в ленте)

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Тип Наименование Корпус Упаковка i Карточка
товара
P= IRLR8726 (EVVO)
 
TO252 в ленте 2500 шт
 

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UMW R IRLR8726 N-Channel MOSFET Features l V DS (V)=30V l RDS(ON) RDS(ON) l 5.8m 8 m (VGS = 10V) (VGS = 4.5V) Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l l l Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter Max. Units Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V 30 ± 20 86 V 61 A IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation PD @TC = 100°C Maximum Power Dissipation TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range VDS VGS ID @ TC = 25°C ID @ TC = 100°C c f f 340 h h W 75 38 W/°C °C 0.5 -55 to + 175 Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter h RθJC Junction-to-Case RθJA Junction-to-Ambient (PCB Mount) RθJA Junction-to-Ambient h Typ. Max. Units 2.0 gh 50 °C/W 110 Notes  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 0.605mH, RG = 25Ω, IAS = 20A. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 50A. When mounted on 1" square PCB (FR-4 or G-10 Material).For recommended footprint and soldering techniques refer to application note #AN-994. † Rθ is measured at TJ approximately at 90°C www.umw-ic.com 1 UTD Semiconductor Co.,Limited PDF
Документация на IRLR8726TR 

UMW IRLR8726TR

Дата модификации: 12.04.2023

Размер: 469.3 Кб

7 стр.

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