YJD112010DQG2
RoHS
YJD112010DQG2
COMPLIANT
Silicon Carbide Schottky Diode
VRRM
1200V
IF（135°C）
16A
QC
53nC
Features
● Positive temperature coefficient
● Temperature-independent switching
● Maximum working temperature at 175 °C
● Unipolar devices and zero reverse recovery current
● Zero forward recovery current
● Essentially no switching losses
● Reduction of heat sink requirements
● High-frequenc...
развернуть ▼ свернуть ▲ - Корпус: TO-252-3 DPAK
- Норма упаковки: 100 шт.
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RoHS
YJD112010DQG2
COMPLIANT
Silicon Carbide Schottky Diode
VRRM
1200V
IF（135°C）
16A
QC
53nC
Features
● Positive temperature coefficient
● Temperature-independent switching
● Maximum working temperature at 175 °C
● Unipolar devices and zero reverse recovery current
● Zero forward recovery current
● Essentially no switching losses
● Reduction of heat sink requirements
● High-frequency operation
● Reduction of EMI
Typical Applications
Typical applications are in power factor correction(PFC), solar
inverter, uninterruptible power supply, motor drives, photovoltaic
inverter, electric car and charger.
Mechanical Data
● Package: TO-252
● Terminals: Tin plated leads
● Polarity: As marked
■Maximum Ratings (TC=25℃ Unless otherwise specified）
PARAMTETER
SYMBOL
UNIT
Device marking code
VALUE
D112010DQG2
Reverse voltage (repetitive peak)
@ Tj=25°C
VRRM
V
1200
Reverse voltage (Surge Peak)
@ Tj=25°C
VRSM
V
1200
Reverse voltage (DC)
@ Tj=25°C
VDC
V
1200
33
Continuous forward current @ Tc=25°C
Continuous forward current @ Tc=135°C
IF
A
Continuous forward current @ Tc=159°C
16
10
Non-repetitive peak forward surge current
@ Tc=25°C, tp=10ms, Half Sine Wave
IFSM
A
PTOT
W
Power Dissipation@ Tc=25°C
85
189
Power Dissipation@ Tc=110°C
82
i2t Value@ Tc=25°C ,tp=10ms
Operating junction and Storage temperature range
∫i2dt
A2 S
36
Tj ,Tstg
°C
-55 to +175
1/5
S-SIC057
Rev.1.0,14-Nov-22
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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