YJD106540NCTQG2
RoHS
YJD106540NCTQG2
COMPLIANT
Silicon Carbide Schottky Diode
VRRM
650V
IF（135°C）
52A(2)
QC
124nC(2)
Features
● Positive temperature coefficient
● Temperature-independent switching
● Maximum working temperature at 175 °C
● Unipolar devices and zero reverse recovery current
● Zero forward recovery current
● Essentially no switching losses
● Reduction of heat sink requirements
● High-...
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RoHS
YJD106540NCTQG2
COMPLIANT
Silicon Carbide Schottky Diode
VRRM
650V
IF（135°C）
52A(2)
QC
124nC(2)
Features
● Positive temperature coefficient
● Temperature-independent switching
● Maximum working temperature at 175 °C
● Unipolar devices and zero reverse recovery current
● Zero forward recovery current
● Essentially no switching losses
● Reduction of heat sink requirements
● High-frequency operation
● Reduction of EMI
Typical Applications
Typical applications are in power factor correction(PFC), solar
inverter, uninterruptible power supply, motor drives, photovoltaic
inverter, electric car and charger.
Mechanical Data
● Package: TO-247AB
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, halogen-free
● Terminals: Tin plated leads
● Polarity: As marked
■Maximum Ratings (TC=25℃ Unless otherwise specified)
PARAMTETER
SYMBOL
UNIT
Device marking code
VALUE
D106540NCTQG2
Reverse voltage (repetitive peak)
@ Tj=25°C
VRRM
V
650
Reverse voltage (Surge Peak)
@ Tj=25°C
VRSM
V
650
Reverse voltage (DC)
@ Tj=25°C
VDC
V
650
56/112
Continuous forward current @ Tc=25°C
Continuous forward current @ Tc=135°C
IF
A
26/52
Continuous forward current @ Tc=148°C
20/40
Non-repetitive peak forward surge current
@ Tc=25°C, tp=10ms, Half Sine Wave
IFSM
A
PTOT
W
160
Power Dissipation@ Tc=25°C
187/365
Power Dissipation@ Tc=110°C
81/158
i2t Value@ Tc=25°C ,tp=10ms
Operating junction and Storage temperature range
(1)
(1)
∫i2dt
A2 S
128(1)
Tj ,Tstg
°C
-55 to +175
Per Leg, (2) Per Device
1/6
S-SIC040
Rev.1.0,13-Aug-22
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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