WMQ090NV6LG4

WAYON
WMQ090NV6LG4 65V N-Channel Enhancement Mode Power MOSFET Description WMQ090NV6LG4 uses Wayon's 4 th generation power trench D D D D D MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S This device is well suited for high efficiency fast switching applications. S S D D D G G S S PDFN3030-8L ...
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P= WMQ098N06LG2 (WAYON)
 
PDFN8L3X3 в ленте 3000 шт
 

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WMQ090NV6LG4 65V N-Channel Enhancement Mode Power MOSFET Description WMQ090NV6LG4 uses Wayon's 4 th generation power trench D D D D D MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S This device is well suited for high efficiency fast switching applications. S S D D D G G S S PDFN3030-8L Features  VDS = 65V, ID = 44A RDS(on) < 9mΩ @ VGS = 10V RDS(on) < 13mΩ @ VGS = 4.5V  Green Device Available  100% EAS Guaranteed  Low Rds(on) RoHS D compliant G Applications  Synchronous Rectification  DC/DC Converter S Absolute Maximum Ratings (TA = 25°C, unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 65 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC=25°C TC=100°C ID 44 27 A IDM 176 A EAS 57.8 mJ PD 29 W TJ, TSTG -55 to 150 °C Symbol Value Unit Thermal Resistance from Junction-to-Ambient3 RθJA 55 °C/W Thermal Resistance from Junction-to-Case RθJC 4.3 °C/W Pulsed Drain Current1 Single Pulse Avalanche Energy2 Total Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Rev.1.0, 2023 Doc:W0803917 1/7 S PDF
Документация на WMQ090NV6LG4 

Shang Hai Wayon Thermo-Electro Keywords:

Дата модификации: 27.07.2023

Размер: 624.4 Кб

7 стр.

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