WMQ048NV6LG4

WAYON
WMQ048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET Description WMQ048NV6LG4 uses Wayon's 4th generation power trench D D D D D MOSFET technology that has been especially tailored to minimize S S D D D G the on-state resistance and yet maintain superior switching S performance. This device is well suited for high efficiency fast PDFN3030-8L G S S S switching application...
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товара
P= YJQ62G06A (YJ)
 
— в ленте 10 шт
 
P= WMQ060N06LG2 (WAYON)
 
PDFN8L3X3 в ленте 3000 шт
 

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WMQ048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET Description WMQ048NV6LG4 uses Wayon's 4th generation power trench D D D D D MOSFET technology that has been especially tailored to minimize S S D D D G the on-state resistance and yet maintain superior switching S performance. This device is well suited for high efficiency fast PDFN3030-8L G S S S switching applications. Features  VDS = 65V, ID = 72A RDS(on) < 5.2mΩ @ VGS = 10V RDS(on) < 7mΩ @ VGS = 4.5V  Low RDS(ON)  100% EAS Guaranteed  High Speed Power Switching RoHS D compliant Applications G  Synchronous Rectification  DC/DC Converter S Absolute Maximum Ratings (TA = 25°C, unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 65 V Gate-Source Voltage VGS ±20 V TC=25°C Continuous Drain Current ID TC=100°C 72 46 A IDM 288 A EAS 80 mJ PD 43 W TJ , TSTG -55 to 150 °C Symbol Value Unit Thermal Resistance from Junction-to-Ambient3 RθJA 53 °C/W Thermal Resistance from Junction-to-Case RθJC 2.9 °C/W Pulsed Drain Current1 Single Pulse Avalanche Energy2 Total Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Rev.1.0, 2022 Doc:W0803775 1/7 PDF
Документация на WMQ048NV6LG4 

Shang Hai Wayon Thermo-Electro Keywords:

Дата модификации: 02.12.2022

Размер: 616.8 Кб

7 стр.

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