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WMO190N15HG4

WAYON
WMO190N15HG4 150V N-Channel Enhancement Mode Power MOSFET Description WMO190N15HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. G TO-252 Features  S VDS = 150V, ID = 54A RDS(on) &...
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Тип Наименование Корпус Упаковка i Карточка
товара
P= WMB340N20HG2 (WAYON)
 
PDFN8L5X6 в ленте 800 шт
 
P- NCE1540K (NCE)
 
TO252 5 шт
 

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WMO190N15HG4 150V N-Channel Enhancement Mode Power MOSFET Description WMO190N15HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. G TO-252 Features  S VDS = 150V, ID = 54A RDS(on) < 19.5mΩ @ VGS = 10V  Green Device Available  100% EAS Guaranteed  Low Gate Charge RoHS D compliant G Applications  Synchronous Rectification  LED Backlighting  Motor Control S Absolute Maximum Ratings（TA = 25°C, unless otherwise noted） Parameter Symbol Value Unit Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ±20 V TC=25°C Continuous Drain Current TC=100°C ID 54 A 34 IDM 216 A EAS 96.8 mJ PD 121.4 W TJ , TSTG -55 to 150 °C Symbol Value Unit Thermal Resistance from Junction-to-Ambient3 RθJA 48 °C/W Thermal Resistance from Junction-to-Case RθJC 1.03 °C/W Pulsed Drain Current1 Single Pulse Avalanche Energy2 Total Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Rev.2.0, 2023 Doc:W0803892 1/7 PDF
Документация на WMO190N15HG4 

Shang Hai Wayon Thermo-Electro Keywords:

Дата модификации: 30.08.2023

Размер: 613.3 Кб

7 стр.

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