WMO190N03TS

WAYON
WMO190N03TS 30V N-Channel Enhancement Mode Power MOSFET Description WMO190N03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet D maintain superior switching performance. G TO-252 Features  VDS = 30V, ID = 190A S RDS(on) < 2.8mΩ @ VGS = 10V RDS(on) < 4mΩ @ VGS = 4.5V  Green Device Available  Low Gate Charge ...
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Внешний вид LM78M05CDT/TR
  • Корпус: TO252
  • Норма упаковки: 2500  шт. (в ленте)

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WMO190N03TS 30V N-Channel Enhancement Mode Power MOSFET Description WMO190N03TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet D maintain superior switching performance. G TO-252 Features  VDS = 30V, ID = 190A S RDS(on) < 2.8mΩ @ VGS = 10V RDS(on) < 4mΩ @ VGS = 4.5V  Green Device Available  Low Gate Charge  100% EAS Guaranteed RoHS D compliant G Applications  Power Management Switches  DC/DC Converter S Absolute Maximum Ratings（TA = 25°C, unless otherwise noted） Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V 190 TC=25°C ID Continuous Drain Current TC=100°C A 120 IDM 760 A EAS 180 mJ PD 166.7 W TJ , TSTG -55 to 150 °C Symbol Value Unit Thermal Resistance from Junction-to-Ambient3 RθJA 40 °C/W Thermal Resistance from Junction-to-Case RθJC 0.75 °C/W Pulsed Drain Current1 Single Pulse Avalanche Energy2 Total Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Rev.2.0, 2023 Doc:W0803728 1/7 PDF
Документация на WMO190N03TS 

Shang Hai Wayon Thermo-Electro Keywords:

Дата модификации: 04.04.2023

Размер: 631.5 Кб

7 стр.

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