WMM220N20HG3

WAYON
WMM220N20HG3 200V N-Channel Enhancement Mode Power MOSFET Description WMM220N20HG3 uses Wayon's 3nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This device G is well suited for high efficiency fast s witching applications. S . TO-263 Features ⚫ VDS= 200V, ID = 78A RDS(on...
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WMM220N20HG3 200V N-Channel Enhancement Mode Power MOSFET Description WMM220N20HG3 uses Wayon's 3nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This device G is well suited for high efficiency fast s witching applications. S . TO-263 Features ⚫ VDS= 200V, ID = 78A RDS(on) < 22mΩ @ VGS = 10V ⚫ High Speed Power Switching ⚫ Low Gate Charge RoHS ⚫ Low RDS(ON) compliant ⚫ 100% EAS Guaranteed D G Applications ⚫ DC/DC Converter ⚫ LED Backlighting ⚫ Motor Control S Absolute Maximum Ratings (TA= 25°C, unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ±20 V TC=25°C 78 Continuous Drain Current ID TC=100°C A 49.4 Pulsed Drain Current1 IDM 312 A EAS 146 mJ PD 312.5 W TJ, TSTG -55 to 150 °C Symbol Value Unit Thermal Resistance from Junction-to-Ambient3 RθJA 55 °C/W Thermal Resistance from Junction-to-Lead RθJC 0.4 °C/W Single Pulse Avalanche Energy2 Total Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Rev.2.0, 2021 Doc:W0803519 1 / 7 PDF
Документация на WMM220N20HG3 

Shang Hai Wayon Thermo-Electro

Дата модификации: 30.12.2021

Размер: 499.9 Кб

7 стр.

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    2N7002 (YJ)