WMM053N10HGS

WAYON
WMM053N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMM053N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This G device is well suited for high efficiency fast switching applications. S TO-263 Features  VDS = 100V, ID = 120A  RDS(on) ...
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  • Корпус: TO263
  • Норма упаковки: 800  шт.

Аналоги 3

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Тип Наименование Корпус Упаковка i Карточка
товара
P= YJB120G08A (YJ)
 
TO263 800 шт
 
P= WMM071N15HG2 (WAYON)
 
TO263 в ленте 800 шт
 
P= CJB120SN10 (JSCJ)
 
TO2632L
 

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WMM053N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMM053N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state D resistance and yet maintain superior switching performance. This G device is well suited for high efficiency fast switching applications. S TO-263 Features  VDS = 100V, ID = 120A  RDS(on) < 5.5mΩ @ VGS = 10V  Green Device Available  Low Gate Charge  100% EAS Guaranteed RoHS D compliant G Applications  Power Management Switches  DC/DC Converter  LED Backlighting S Absolute Maximum Ratings（TA = 25°C, unless otherwise noted） Parameter Symbol Value Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC=25°C TC=100°C ID 120 A 76 IDM 480 A EAS 245 mJ PD 164.5 W TJ , TSTG -55 to 150 °C Symbol Value Unit Thermal Resistance from Junction-to-Ambient3 RθJA 56 °C/W Thermal Resistance from Junction-to-Case RθJC 0.76 °C/W Pulsed Drain Current1 Single Pulse Avalanche Energy2 Total Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Rev.1.0, 2023 Doc:W0803812 1/7 PDF
Документация на WMM053N10HGS 

Shang Hai Wayon Thermo-Electro Keywords:

Дата модификации: 23.02.2023

Размер: 667.8 Кб

7 стр.

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