WMJ3N120D1

WAYON
WMK3N120D1 WMJ3N120D1 WMO3N120D1 1200V 3A 6.3Ω N-ch Power MOSFET Description TO-247 TO-252 TO-220 WMOS D1 is Wayon’s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. Features  Typ.RDS(on)=6.3Ω@VGS=10V  100% avalanche tested  R...
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WMK3N120D1 WMJ3N120D1 WMO3N120D1 1200V 3A 6.3Ω N-ch Power MOSFET Description TO-247 TO-252 TO-220 WMOS D1 is Wayon’s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. Features  Typ.RDS(on)=6.3Ω@VGS=10V  100% avalanche tested  RoHS Compliant D,TAB Applications RoHS  SMPS compliant  Charger  DC-DC G S Absolute Maximum Ratings（TC=25℃） Parameter Symbol WMJ/WMK WMO Unit Drain-source voltage VDSS 1200 V Gate-source voltage VGS ±30 V ID 3 A IDM 12 A EAS 45 mJ Continuous drain current 1 Pulsed drain current Avalanche energy, single pulse 2 Power dissipation PD Derate above 25°C Operating junction temperature Storage temperature Continuous diode forward current Diode pulse current 1 156 63 W 78 2 W/℃ Tj -55~150 ℃ Tstg -55~150 ℃ IS 3 A ISpulse 12 A Thermal Characteristic Thermal resistance,junction-to-case RθJC 0.8 2 ℃/W Thermal resistance,junction-to-ambient RθJA 62.5 62.5 ℃/W Rev.1.2 2023 www.way-on.com PDF
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Дата модификации: 11.01.2024

Размер: 1.28 Мб

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