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WMJ220N20HG3

WAYON
WMJ220N20HG3 200V N-Channel Enhancement Mode Power MOSFET Description WMJ220N20HG3 uses Wayon's 3rd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. G . S TO-247 Features  D VDS= 200V, ID = 82A RDS(on)...
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  • Корпус: TO-247-3
  • Норма упаковки: 30  шт.

Аналоги 4

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Тип Наименование Корпус Упаковка i Карточка
товара
P= CS60N20AKR (CRMICRO)
 
TO-247-3 1000 шт
P- IRFP4332 (EVVO)
 
TO-247-3 450 шт
 
P- NCEP02T10T (NCE)
 
TO-247-3 в линейках 30 шт
P- CRSQ113N20N (CRMICRO)
 
TO-247-3 в линейках 1000 шт

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WMJ220N20HG3 200V N-Channel Enhancement Mode Power MOSFET Description WMJ220N20HG3 uses Wayon's 3rd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. G . S TO-247 Features  D VDS= 200V, ID = 82A RDS(on) < 21mΩ @ VGS = 10V  High Speed Power Switching  Low Gate Charge  Low RDS(ON)  100% EAS Guaranteed D RoHS compliant G Applications  DC/DC Converter  LED Backlighting  Motor Control S Absolute Maximum Ratings (TA= 25°C, unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC=25°C ID TC=100°C 82 52 A IDM 328 A EAS 217.8 mJ PD 329 W TJ, TSTG -55 to 150 °C Symbol Value Unit Thermal Resistance from Junction-to-Ambient3 RθJA 40 °C/W Thermal Resistance from Junction-to-Lead RθJC 0.38 °C/W Pulsed Drain Current1 Single Pulse Avalanche Energy2 Total Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Rev.1.0, 2023 Doc:W0803827 1/7 PDF
Документация на WMJ220N20HG3 

Shang Hai Wayon Thermo-Electro

Дата модификации: 09.03.2023

Размер: 601 Кб

7 стр.

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