WMB190N15HG4

WAYON
WMB190N15HG4 150V N-Channel Enhancement Mode Power MOSFET Description WMB190N15HG4 uses Wayon's 4th generation power trench D D D D D MOSFET technology that has been especially tailored to minimize the s ss on-state resistance and yet maintain superior switching performance. D DD G G ss s This device is well suited for high efficiency fast switching applications. PDFN5060-8L Featur...
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товара
P= WMO175N10HG4 (WAYON)
 
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P= WMB198N15HG2 (WAYON)
 
PDFN8L5X6 в ленте 3000 шт
 

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WMB190N15HG4 150V N-Channel Enhancement Mode Power MOSFET Description WMB190N15HG4 uses Wayon's 4th generation power trench D D D D D MOSFET technology that has been especially tailored to minimize the s ss on-state resistance and yet maintain superior switching performance. D DD G G ss s This device is well suited for high efficiency fast switching applications. PDFN5060-8L Features  VDS = 150V, ID = 50A RDS(on) < 19.5mΩ @ VGS = 10V  Green Device Available  100% EAS Guaranteed  Low Gate Charge RoHS D compliant G Applications  Synchronous Rectification  LED Backlighting  Motor Control S Absolute Maximum Ratings（TA = 25°C, unless otherwise noted） Parameter Symbol Value Unit Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ±20 V TC=25°C 50 ID Continuous Drain Current TC=100°C Pulsed Drain Current1 A 31.6 IDM 200 A EAS 135.2 mJ PD 104.1 W TJ , TSTG -55 to 150 °C Symbol Value Unit Thermal Resistance from Junction-to-Ambient3 RθJA 50 °C/W Thermal Resistance from Junction-to-Case RθJC 1.2 °C/W Single Pulse Avalanche Energy2 Total Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Rev.3.0, 2023 Doc:W0803903 1/7 PDF
Документация на WMB190N15HG4 

Shang Hai Wayon Thermo-Electro

Дата модификации: 24.10.2023

Размер: 980.1 Кб

7 стр.

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