WMAA4N65D1B

WAYON
WMAA4N65D1B WMK4N65D1B WML4N65D1B WMO4N65D1B 650V 4A 2.2Ω N-ch Power MOSFET Description WMOSTM D1 is Wayon’s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. TAB G G D S TO-252  VDS=700V@Tjmax  Typ.RDS(on)=2.2Ω@VGS=10V  100...
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  • Корпус: TO251

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Тип Наименование Корпус Упаковка i Карточка
товара
P= CJD04N65 (JSCJ)
 
TO251
 
P= CS4N60A3R (CRMICRO)
 
TO251
 

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WMAA4N65D1B WMK4N65D1B WML4N65D1B WMO4N65D1B 650V 4A 2.2Ω N-ch Power MOSFET Description WMOSTM D1 is Wayon’s 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. TAB G G D S TO-252  VDS=700V@Tjmax  Typ.RDS(on)=2.2Ω@VGS=10V  100% avalanche tested  Pb-free，Halogen free G  Charger  DC-DC S TO-251-L9.4 D S G D S RoHS Applications SMPS D TAB Features  TO-220F TO-220 compliant Absolute Maximum Ratings（TC=25℃） Parameter Symbol WMK WML WMO/WMAA Unit Drain-source voltage VDSS 650 V Gate-source voltage VGS ±30 V Continuous drain current ID 4 A Pulsed drain current IDM 16 A Avalanche energy, single pulse EAS 120 mJ Power dissipation PD Derate above 25°C Operating junction temperature Storage temperature Continuous diode forward current Diode pulse current 112 30 77 W 0.91 0.24 0.62 W/℃ Tj -55~150 ℃ Tstg -55~150 ℃ IS 4 A ISpulse 16 A Thermal Characteristic Thermal resistance,junction-to-case RθJC 1.1 4.17 1.62 ℃/W Thermal resistance,junction-to-ambient RθJA 62.5 62.5 62.0 ℃/W Rev.2.0 2023 www.way-on.com PDF
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Дата модификации: 06.04.2023

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