IRLML2502TRPBF

VBsemi Electronics Co.
IRLML2502TRPBF www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 ID (A)e RDS(on) (Ω) 0.028 at VGS = 4.5 V 6a 0.042 at VGS = 2.5 V 6a 0.050 at VGS = 1.8 V 5.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 8.8 nC APPLICATIONS • DC/DC Converters • Load ...
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  • Группа: FET транзисторы  
  • Истор. имя: IRLML2502TRPBF (INFIN)
  • Корпус: —
  • Норма упаковки: 3000  шт. (в ленте)

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IRLML2502TRPBF www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 ID (A)e RDS(on) (Ω) 0.028 at VGS = 4.5 V 6a 0.042 at VGS = 2.5 V 6a 0.050 at VGS = 1.8 V 5.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 8.8 nC APPLICATIONS • DC/DC Converters • Load Switch for Portable Applications SOT-23 G 1 3 S D 2 Top View ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C Continuous Drain Current (TJ = 150 °C) Limit 20 ± 12 ID 5b, c 4b, c 20 1.75 IDM TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C Continuous Source-Drain Diode Current Maximum Power Dissipation TA = 70 °C Operating Junction and Storage Temperature Range V 6a 5.1 TA = 70 °C Pulsed Drain Current Unit IS A 1.04b, c 2.1 1.3 PD W 1.25b, c 0.8b, c - 55 to 150 260 TJ, Tstg Soldering Recommendations (Peak Temperature) °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t≤5s Symbol RthJA Typical 80 Maximum 100 Steady State RthJF 40 60 Unit °C/W Notes: a. Package limited b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125 °C/W. e. Based on TC = 25 °C. E-mail：China@VBsemi TEL:86-755-83251052 1 PDF
Документация на IRLML2502TRPBF 

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Дата модификации: 08.09.2023

Размер: 843 Кб

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