IRF7105TRPBF
VBsemi Electronics Co.
IRF7105TRPBF
www.VBsemi.tw
N- and P-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
N-Channel
P-Channel
ID (A)a Qg (Typ.)
RDS(on) (Ω)
30
- 30
0.018 at VGS = 10 V
8e
0.020 at VGS = 8 V
8e
6.2
e
0.024 at VGS = 4.5 V
8
0.032 at VGS = - 10 V
- 8e
e
0.034 at VGS = - 8 V
-8
0.040 at VGS = - 4.5 V
- 7.5
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET...
развернуть ▼ свернуть ▲ - Альт. имя: IRF7105TRPBF (KLS)
- Истор. имя: IRF7105TRPBF (INFIN)
- Корпус: —
- Норма упаковки: 4000 шт. (в ленте)
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IRF7105TRPBF
www.VBsemi.tw
N- and P-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
N-Channel
P-Channel
ID (A)a Qg (Typ.)
RDS(on) (Ω)
30
- 30
0.018 at VGS = 10 V
8e
0.020 at VGS = 8 V
8e
6.2
e
0.024 at VGS = 4.5 V
8
0.032 at VGS = - 10 V
- 8e
e
0.034 at VGS = - 8 V
-8
0.040 at VGS = - 4.5 V
- 7.5
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
18.5
• Motor Drive
• Mobile Power Bank
D1
S2
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
G2
G1
S1
D2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS
30
- 30
Gate-Source Voltage
VGS
± 20
± 20
8e
- 8e
6.8
- 6.8
6.8b, c
- 6.6b, c
b, c
- 5.3b, c
- 40
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Source-Drain Current Diode Current
TC = 25 °C
TA = 25 °C
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
5.4
40
IDM
Pulsed Drain Current (10 µs Pulse Width)
L = 0.1 mH
2.6
- 2.6
ISM
- 1.6b, c
- 40
IAS
10
- 20
EAS
5
20
TC = 25 °C
3.1
3.2
TC = 70 °C
2
2.1
2b, c
2b, c
TA = 25 °C
PD
TA = 70 °C
1.28b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
V
1.6b, c
40
IS
Unit
A
mJ
W
1.28b, c
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
Symbol
Typ.
Max.
t ≤ 10 s
RthJA
50
Steady State
RthJF
30
P-Channel
Typ.
Max.
62.5
47
62.5
40
29
38
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W (n-channel) and 110 °C/W (p-channel).
e. Package limited.
E-mail：China@VBsemi TEL:86-755-83251052
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