SMA6J26AR3G

Taiwan Semiconductor
SMA6J SERIES Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Transient Voltage Suppressor - Low profile package - Ideal for automated placement - Glass passivated junction - Built-in strain relief - Excellent clamping capability - Fast response time: Typically less than 1.0ps from 0 volt to BV min - 600 watts peak pulse power capability with a 10 / 1000 μs waveform - Moisture sensiti...
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Технические характеристики

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Рассеиваемая мощность
Пиковая рассеиваемая мощность
Рабочее напряжение
Напряжение ограничения (диапазон)
Тип супрессора по свойствам
Количество линий ограничения
  Примечание: Trans Voltage Suppressor Diode, 600W, 26V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC
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Файлы 1

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SMA6J SERIES Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Transient Voltage Suppressor - Low profile package - Ideal for automated placement - Glass passivated junction - Built-in strain relief - Excellent clamping capability - Fast response time: Typically less than 1.0ps from 0 volt to BV min - 600 watts peak pulse power capability with a 10 / 1000 μs waveform - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC DO-214AC (SMA) - Halogen-free according to IEC 61249-2-21 definition - AEC-Q101 qualified MECHANICAL DATA Case: DO-214AC (SMA) Molding compound, UL flammability classification rating 94V-0 Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.06 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL Value UNIT Peak power dissipation at TA=25°C, tp=1ms(Note 1) PPK 600 Watts Steady state power dissipation PD 4 Watts Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 50 A Typcial thermal resistance RθJA RθJL 56 TJ - 55 to +175 °C TSTG - 55 to +175 °C Operating junction temperature range Storage temperature range 20 °C/W Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above TA=25°C Per Fig. 2 Document Number: DS_D1502001 Version: A15 PDF
Документация на SMA6J10AR3G 

SMA6J SERIES_A15.xls

Дата модификации: 09.04.2015

Размер: 213.1 Кб

5 стр.

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