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RS8801HXF5

Runic
Single-Channel 5A High-Speed Low-Side Gate Driver for MOSFET (GaN) and IGBT with Negative Input Voltage Capability
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Технические характеристики

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Корпус SOT235
Кол-во нижних каналов
Кол-во верхних каналов
Максимальное напряжение смещения
Максимальный выходной ток нарастания
Максимальный выходной ток спада
Рабочая температура
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Файлы 1

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RS8801 Single-Channel High-Speed Low-Side Gate Driver with Negative Input Voltage Capability (with 5A Peak Source and Sink) 1 FEATURES               Low-Cost Gate-Driver Device Offering Superior Replacement of NPN and PNP Discrete Solutions 5A Peak-Source and Sink Symmetrical Drive Ability to Handle Negative Voltages (-4V) at Inputs Fast Propagation Delays (11ns typical) Fast Rise and Fall Times (8.5ns and 7ns typical) 4.5V to 18V Single-Supply Range Outputs Held Low During VDD UVLO (ensures glitch-free operation at power up and power down) TTL and CMOS Compatible Input-Logic Threshold (independent of supply voltage) Hysteretic-Logic Thresholds for High-Noise Immunity Dual Input Design (choice of an inverting (INpin) or non-inverting (IN+ pin) driver configuration) – Unused Input Pin can be Used for Enable or Disable Function Output Held Low when Input Pins are Floating Input Pin Absolute Maximum Voltage Levels Not Restricted by VDD Pin Bias Supply Voltage Operating Temperature Range of –40°C to +140°C Micro SIZE PACKAGES: SOT23-5 2 APPLICATIONS 3 DESCRIPTIONS The RS8801 single-channel, high-speed, low-side gate driver device is capable of effectively driving MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, the RS8801 is capable of sourcing and sinking high peakcurrent pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 11ns. The RS8801 device is capable of handling -4V at input. The RS8801 provides 5A source and sink peak-drive current capability at VDD = 12V. The RS8801 is designed to operate over a wide VDD range of 4.5V to 18V and wide temperature range of – 40°C to 140°C. Internal Undervoltage Lockout (UVLO) circuitry on VDD pin holds output low outside VDD operating range. The capability to operate at low voltage levels such as below 5V, along with best-inclass switching characteristics, is especially suited for driving emerging wide band-gap power-switching devices as GaN power semiconductor devices. The RS8801 series is available in Green SOT23-5 packages. It operates over an ambient temperature range of -40°C to +140°C. Device Information (1) PART NUMBER RS8801 (1) Switch-Mode Power Supplies DC-to-DC Converters Companion Gate-Driver Devices for DigitalPower Controllers  Solar Power, Motor Control, UPS  Gate Driver for Emerging Wide Band-Gap Power Devices (such as GaN)    REV A.1 1 / 18 PACKAGE SOT23-5 BODY SIZE (NOM) 1.60mm×2.92mm For all available packages, see the orderable addendum at the end of the data sheet. www.run-ic.com PDF
Документация на RS8801HXF5 

Дата модификации: 24.11.2024

Размер: 584.6 Кб

18 стр.

    Публикации 1

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    28 июня 2024
    новость

    Новые драйверы затвора RS880x производства RUNIC для GaN-транзисторов

    Китайская компания Jiangsu Runic Technology CO., Ltd (Runic) запустила производство бюджетных микросхем 1– и 2–канальных высокоскоростных драйверов затвора нижнего плеча (low–side) для MOSFET и IGBT. Продукция отличается хорошими... ...читать

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