NSI8260W1-Q1SWR

Novosense
NSI826x-Q1 High Reliability Reinforced Six-Channel Digital Isolators Datasheet (EN) 1.0 Product Overview Safety Regulatory Approvals The NSi826x devices are high reliability six-channel digital isolators. The NSi826x device is safety certified by UL1577 support several insulation withstand voltage (3kV,5kV), while providing high electromagnetic immunity and low emissions at low power consumpt...
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Внешний вид NSI8260S0-DSSR

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NSI826x-Q1 High Reliability Reinforced Six-Channel Digital Isolators Datasheet (EN) 1.0 Product Overview Safety Regulatory Approvals The NSi826x devices are high reliability six-channel digital isolators. The NSi826x device is safety certified by UL1577 support several insulation withstand voltage (3kV,5kV), while providing high electromagnetic immunity and low emissions at low power consumption. The data rate of the NSi826x is up to 150Mbps, and the common-mode transient immunity (CMTI) is up to 200kV/us. The NSi826x device provides digital channel direction configuration and the default output level configuration when the input power is lost. Wide supply voltage of the NSi826x device supports to connect with most digital interface directly, easy to do the level shift. High system level EMC performance enhance reliability and stability of use.  UL recognition: up to 5000Vrms for 1 minute per UL1577 Key Features  Up to 5000Vrms Insulation voltage  CQC certification per GB4943.1-2011  CSA component notice 5A  DIN VDE V 0884-11:2017-01 Applications  Industrial automation system  Isolated SPI, RS232, RS485  General-purpose multichannel isolation Device Information Part Number NSI826xWx-Q1SWR Package SOP16(300mil） Body Size 10.30mm × 7.50mm  Date rate: DC to 150Mbps  Power supply voltage: 2.5V to 5.5V Functional Block Diagrams  High CMTI: 200kV/us  Chip level ESD: HBM: ±8kV  High system level EMC performance: Enhanced system level ESD, EFT, Surge immunity  Default output high level or low level option VDD1 1 16 VDD2 VDD1 1 16 VDD2 2 15 OUTA INA 2 15 OUTA INB 3 14 OUTB INB 3 14 OUTB INC 4 13 OUTC INC 4 13 OUTC IND 5 12 OUTD IND 5 12 OUTD INE 6 11 OUTE INE 6 INF 7 10 OUTF INA OUTF 11 OUTE 10 INF 7 GND2 GND1 8 VDD1 1 16 VDD2 VDD1 1 16 VDD2  Low power consumption: 1.5mA/ch (1 Mbps) INA 2 15 OUTA INA 2 15 OUTA INB 3 14 OUTB INB 3 14 OUTB  Low propagation delay: <15ns INC 4 13 OUTC INC 4 13 OUTC IND 5 12 OUTD OUTD 5 OUTE 6 11 INE OUTE 6 11 INE OUTF 7 10 INF OUTF 7 10 INF  Isolation barrier life: >60 years  Operation temperature: -40℃~125℃  RoHS-compliant packages: SOP16(300mil） Copyright © 2021, NOVOSENSE GND1 8 GND1 8 NSI8260 9 NSI8262 9 GND2 GND1 8 NSI8261 9 GND2 12 IND NSI8263 9 GND2 Figure 1. NSi826x Block Diagram Page 1 PDF
Документация на NSI8260W1-Q1SWR 

Дата модификации: 30.12.2021

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