LBC847BPDW1T1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals (Complimentary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring U...
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Технические характеристики

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Корпус SOT-323-6 sot363
Напряжение КЭ максимальное
Напряжение падения КЭ в открытом состоянии
Ток коллектора
Граничная рабочая частота
Коэффициент усиления по току
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Аналоги 5

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Тип Наименование Корпус Упаковка i Тип Пара Pрасс UКЭ(макс) UКЭ(пад) IК(макс) F гран h 21 R1 R2 Примечание Карточка
товара
P= BC847PN (JSCJ)
 
SOT-323-6 SOT363 в ленте 3000 шт
 
P= BC847PN (YJ)
 
SOT-323-6 SOT363 в ленте 3000 шт
 
P= BC847S (JSCJ)
 

BC847S (ONS-FAIR)
SOT-323-6 SOT363 в ленте 3000 шт
 
Small Signal Bipolar Transistor, 0.2A I(C), NPN
P= BC847PN (SHIKUES)
 
SOT-323-6 SOT363 1 шт
 
P= BC846BPN (YJ)
 
SOT-323-6 SOT363 в ленте 3000 шт
 

Файлы 1

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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals (Complimentary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBC846BPDW1T1G LBC847BPDW1T1G LBC847CPDW1T1G LBC848BPDW1T1G LBC848CPDW1T1G S-LBC846BPDW1T1G S-LBC847BPDW1T1G S-LBC847CPDW1T1G S-LBC848BPDW1T1G S-LBC848CPDW1T1G ORDERING INFORMATION Device Marking LBC846BPDW1T1G LBC846BPDW1T3G LBC847BPDW1T1G LBC847BPDW1T3G LBC847CPDW1T1G S-LBC846BPDW1T1G S-LBC846BPDW1T3G S-LBC847BPDW1T1G S-LBC847BPDW1T3G S-LBC847CPDW1T1G LBC847CPDW1T3G S-LBC847CPDW1T3G LBC848BPDW1T1G S-LBC848BPDW1T1G LBC848BPDW1T3G S-LBC848BPDW1T3G LBC848CPDW1T1G S-LBC848CPDW1T1G LBC848CPDW1T3G S-LBC848CPDW1T3G Shipping BB BB BF BF BG BG BK BK BL BL 6 3000 Units/Reel 4 1 10000 Units/Reel 3000 Units/Reel 2 3 10000 Units/Reel 3000 Units/Reel CASE 419B STYLE 1 3 3000 Units/Reel 2 Q1 Symbol 1 10000 Units/Reel LBC846 LBC847 LBC848 Q2 Unit Collector-Emitter Voltage VCEO 65 45 30 V Collector-Base Voltage VCBO 80 50 30 V Emitter-Base Voltage VEBO 6.0 6.0 5.0 V IC 100 100 100 mAdc Collector Current Ð Continuous SOT-363/SC-88 10000 Units/Reel MAXIMUM RATINGS - NPN Rating 5 10000 Units/Reel 3000 Units/Reel 4 5 6 DEVICE MARKING MAXIMUM RATINGS - PNP Rating Symbol LBC846 LBC847 LBC848 Unit Collector-Emitter Voltage VCEO -65 -45 -30 V Collector-Base Voltage VCBO -80 -50 -30 V Emitter-Base Voltage VEBO -5.0 -5.0 -5.0 V IC -100 -100 -100 mAdc Collector Current Ð Continuous See Table THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 380 250 mW 3.0 mW/˚C Thermal Resistance, Junction to Ambient RθJA 328 ˚C/W Junction and Storage Temperature Range TJ, Tstg -55 to +150 Total Device Dissipation Per Device FR-5 Board (1) TA = 25˚C Derate Above 25˚C ˚C 1. FR-5 = 1.0 x 0.75 x 0.062 in Rev.O 1/9 PDF
Документация на LBC847BPDW1T1G 

Дата модификации: 27.11.2023

Размер: 187.6 Кб

9 стр.

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