L-3DP3BT

Kingbright
L-3DP3BT Phototransistor DESCRIPTION  PACKAGE DIMENSIONS Made with NPN silicon phototransistor chips FEATURES    Mechanically and spectrally matched to the infrared emitting LED lamp Blue transparent lens RoHS compliant APPLICATIONS     Infrared applied systems Optoelectronic switches Photodetector control circuits Sensor technology t h g in g i r b K Notes: 1. All dimension...
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L-3DP3BT Phototransistor DESCRIPTION  PACKAGE DIMENSIONS Made with NPN silicon phototransistor chips FEATURES    Mechanically and spectrally matched to the infrared emitting LED lamp Blue transparent lens RoHS compliant APPLICATIONS     Infrared applied systems Optoelectronic switches Photodetector control circuits Sensor technology t h g in g i r b K Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the leads emerge from the package. 4. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. ABSOLUTE MAXIMUM RATINGS at TA=25°C Parameter Max.Ratings Units Collector-to-Emitter Voltage 30 V Emitter-to-Collector Voltage 5 V 100 mW Operating Temperature -40 to +85 °C Storage Temperature -40 to +85 °C 260 °C Power Dissipation at (or below) 25°C Free Air Temperature Lead Soldering Temperature(>5mm for 5sec) Note: 1. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity – Ref JEDEC/JESD625-A and JEDEC/J-STD-033. © 2019 Kingbright. All Rights Reserved. Spec No: DSAC5792 / 1101003911 Rev No: V.16 Date: 05/06/2019 Page 1 / 4 PDF
Документация на L-3DP3BT 

L-3DP3BT(Ver.16)

Дата модификации: 06.05.2019

Размер: 957.2 Кб

4 стр.

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    CLN6A-MKW-CH0K0133 (CREE)