JMSL1018AP

JIEJIE
JMSL1018AP 100V 15.8m N-Ch Power MOSFET Product Summary Features Parameter • Ultra-low RDS(ON) • Low Gate Charge • 100% UIS Tested, 100% Rg Tested Value Unit VDS 100 V VGS(th)_typ 1.9 V 8 A • Pb-free Lead Plating ID (@ VGS = 10V) (1) RDS(ON)_typ (@ VGS = 10V) 15.8 m • Halogen-free and RoHS-compliant RDS(ON)_typ (@ VGS = 4.5V) 19 m Applications • Power Managerment in Te...
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JMSL1018AP 100V 15.8m N-Ch Power MOSFET Product Summary Features Parameter • Ultra-low RDS(ON) • Low Gate Charge • 100% UIS Tested, 100% Rg Tested Value Unit VDS 100 V VGS(th)_typ 1.9 V 8 A • Pb-free Lead Plating ID (@ VGS = 10V) (1) RDS(ON)_typ (@ VGS = 10V) 15.8 m • Halogen-free and RoHS-compliant RDS(ON)_typ (@ VGS = 4.5V) 19 m Applications • Power Managerment in Telecom., Industrial Automation, CE • Current Switching in DC/DC & AC/DC Sub-systems • Motor Driving in Power Tool, E-vehicle, Robotics SOP-8L Top View Top View Pin Configuration SOP-8L Bottom View D G S Ordering Information Device Package # of Pins Marking MSL TJ (°C) Media Quantity (pcs) JMSL1018AP-13 SOP-8L 8 SL1018A 3 -55 to 150 13-inch Reel 2500 Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain-to-Source Voltage VDS 100 V Gate-to-Source Voltage VGS ±20 V TA = 25°C Continuous Drain Current (1) 8.1 ID TA = 70°C Pulsed Drain Current (2) A 6.5 IDM 34 (3) IAS 22 A Avalanche Energy (3) EAS 24 mJ Avalanche Current Power Dissipation (4) TA = 25°C 2.5 PD TA = 70°C Junction & Storage Temperature Range -55 to 150 TJ, TSTG °C Gate Charge 200 10 ID = 5A VDS = 50V 8 120 6 VGS (V) 160 RDS(ON) (m) W 1.6 RDS(ON) vs. VGS 80 ID = 5A 4 2 40 0 0 0 5 10 15 20 0 3 VGS (V) Rev. 1.2 A 6 9 12 15 Qg (nC) JieJie Microelectronics Co., Ltd. All product information are copyrighted and subject to legal disclaimers Page 1 of 5 PDF
Документация на JMSL1018AP-13 

JMSL1018AP_Rev1.2.xlsx

Дата модификации: 30.06.2022

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