JMSL1018AG

JIEJIE
JMSL1018AG 100V 14.5m N-Ch Power MOSFET Features Product Summary Parameter Value Unit VDS 100 V VGS(th)_Typ 1.9 V 35 A • Pb-free Lead Plating ID (@ VGS = 10V) (1) RDS(ON)_Typ (@ VGS = 10V) 14.5 m • Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 4.5V) 18.7 m • Low RDS(ON) • Low Gate Charge • 100% UIS Tested, 100% Rg Tested Applications • Power Managerment in Teleco...
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JMSL1018AG 100V 14.5m N-Ch Power MOSFET Features Product Summary Parameter Value Unit VDS 100 V VGS(th)_Typ 1.9 V 35 A • Pb-free Lead Plating ID (@ VGS = 10V) (1) RDS(ON)_Typ (@ VGS = 10V) 14.5 m • Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 4.5V) 18.7 m • Low RDS(ON) • Low Gate Charge • 100% UIS Tested, 100% Rg Tested Applications • Power Managerment in Telecom., Industrial Automation, CE • Current Switching in DC/DC & AC/DC Sub-systems • Motor Driving in Power Tool, E-vehicle, Robotics PDFN5x6-8L Top View Pin Configuration Bottom View Top View D 1 8 2 7 3 6 4 5 G S Ordering Information Device Package # of Pins Marking MSL TJ (°C) Media Quantity (pcs) JMSL1018AG-13 PDFN5x6-8L 8 SL1018A 1 -55 to 150 13-inch Reel 5000 Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain-to-Source Voltage VDS 100 V Gate-to-Source Voltage VGS ±20 V TC = 25°C Continuous Drain Current (1) 35 ID TC = 100°C Pulsed Drain Current (2) A 22 IDM 105 (3) IAS 24 A Avalanche Energy (3) EAS 29 mJ Avalanche Current Power Dissipation (4) TC = 25°C 43 PD TC = 100°C Junction & Storage Temperature Range -55 to 150 TJ, TSTG °C Gate Charge 200 10 VDS = 50V ID = 20A 160 RDS(ON) (m) W 17 RDS(ON) vs. VGS 8 VGS (V) 120 80 ID = 20A 6 4 2 40 0 0 0 Rev. 2.1 A 5 10 VGS (V) 15 20 0 3 JieJie Microelectronics Co., Ltd. All product information are copyrighted and subject to legal disclaimers 6 9 Qg (nC) 12 15 Page 1 of 5 PDF
Документация на JMSL1018AG-13 

JMSL1018AG_Rev2.1.xlsx

Дата модификации: 27.12.2022

Размер: 312.2 Кб

5 стр.

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