JMSL1010AG

JIEJIE
JMSL1010AG 100V 8.0m N-Ch Power MOSFET Product Summary Features Parameter • Ultra-low RDS(ON) • Low Gate Charge • 100% UIS Tested, 100% Rg Tested • Pb-free Lead Plating • Halogen-free and RoHS-compliant Value Unit VDS 100 V VGS(th)_Typ 1.9 V ID (@ VGS = 10V) (1) RDS(ON)_Typ (@ VGS = 10V) 58 A 8.0 m RDS(ON)_Typ (@ VGS = 4.5V) 10.5 m Applications • Power Managerment in Tel...
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JMSL1010AG 100V 8.0m N-Ch Power MOSFET Product Summary Features Parameter • Ultra-low RDS(ON) • Low Gate Charge • 100% UIS Tested, 100% Rg Tested • Pb-free Lead Plating • Halogen-free and RoHS-compliant Value Unit VDS 100 V VGS(th)_Typ 1.9 V ID (@ VGS = 10V) (1) RDS(ON)_Typ (@ VGS = 10V) 58 A 8.0 m RDS(ON)_Typ (@ VGS = 4.5V) 10.5 m Applications • Power Managerment in Telecom., Industrial Automation, CE • Current Switching in DC/DC & AC/DC Sub-systems • Motor Driving in Power Tool, E-vehicle, Robotics PDFN5x6-8L Top View Top View Pin Configuration Bottom View D 1 8 2 7 3 6 4 5 G S Ordering Information Device Package # of Pins Marking MSL TJ (°C) Media Quantity (pcs) JMSL1010AG-13 PDFN5x6-8L 8 SL1010A 1 -55 to 150 13-inch Reel 5000 Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain-to-Source Voltage VDS 100 V Gate-to-Source Voltage VGS ±20 V Continuous Drain Current (1) TC = 25°C 58 ID TC = 100°C (2) A 37 IDM 176 Avalanche Current (3) IAS 25 A Avalanche Energy (3) EAS 94 mJ Pulsed Drain Current Power Dissipation (4) TC = 25°C 63 PD TC = 100°C -55 to 150 RDS(ON) vs. VGS 10 VDS = 50V ID = 20A 40 8 30 6 VGS (V) RDS(ON) (m) °C Gate Charge 50 20 ID = 20A 4 2 10 0 0 0 Rev. 1.3 W 25 TJ, TSTG Junction & Storage Temperature Range A 5 10 VGS (V) 15 20 0 6 JieJie Microelectronics Co., Ltd. All product information are copyrighted and subject to legal disclaimers 12 18 Qg (nC) 24 30 Page 1 of 5 PDF
Документация на JMSL1010AG-13 

JMSL1010AG_Rev1.3.xlsx

Дата модификации: 27.12.2022

Размер: 325.9 Кб

5 стр.

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