JMSL1009AG

JIEJIE
JMSL1009AG 100V 7.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit VDS 100 V VGS(th)_Typ 1.7 V 77 A • Pb-free Lead Plating ID (@ VGS = 10V) (1) RDS(ON)_Typ (@ VGS = 10V) 7.0 m • Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 4.5V) 8.9 m • Ultra‐low ON-resistance, RDS(ON) • Low Gate Charge, Qg • 100% UIS and Rg Tested Applications • Power Manageme...
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JMSL1009AG 100V 7.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit VDS 100 V VGS(th)_Typ 1.7 V 77 A • Pb-free Lead Plating ID (@ VGS = 10V) (1) RDS(ON)_Typ (@ VGS = 10V) 7.0 m • Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 4.5V) 8.9 m • Ultra‐low ON-resistance, RDS(ON) • Low Gate Charge, Qg • 100% UIS and Rg Tested Applications • Power Management in Telecom., Industrial Automation, CE • Current Switching in DC/DC & AC/DC (SR) Sub-systems • Motor Driving in Power Tool, E-vehicle, Robotics PDFN5x6-8L Pin Configuration Top View Bottom View Top View D 1 8 2 7 3 6 4 5 G S Ordering Information Device Package # of Pins Marking MSL TJ (°C) Media Quantity (pcs) JMSL1009AG-13 PDFN5x6-8L 8 SL1009A 1 -55 to 150 13-inch Reel 5000 Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified) Symbol Value Unit Drain-to-Source Voltage VDS 100 V Gate-to-Source Voltage VGS ±20 V Parameter Continuous Drain Current (1) TC = 25°C 77 ID TC = 100°C A 49 Pulsed Drain Current (2) IDM 231 Avalanche Current (3) IAS 24 A Avalanche Energy (3) EAS 86 mJ Power Dissipation (4) TC = 25°C 90 PD TC = 100°C W 36 TJ, TSTG Junction & Storage Temperature Range -55 to 150 RDS(ON) vs. VGS °C Gate Charge 50 10 VDS = 50V ID = 20A 40 8 30 6 VGS (V) RDS(ON) (m) A 20 10 ID = 20A 4 2 0 0 5 10 15 20 0 0 6 VGS (V) Rev. 1.1 12 18 24 30 Qg (nC) JieJie Microelectronics Co., Ltd. All product information are copyrighted and subject to legal disclaimers Page 1 of 6 PDF
Документация на JMSL1009AG-13 

JMSL1009AG_Rev1.1.xlsx

Дата модификации: 27.12.2022

Размер: 394.4 Кб

6 стр.

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