JMSL1008AG

JIEJIE
JMSL1008AG 100V 6.0m N-Ch Power MOSFET Features Product Summary Parameter Typ. Unit VDS 100 V VGS(th) 1.7 V 93 A • Pb-free Lead Plating ID (@ VGS = 10V) (1) RDS(ON) (@ VGS = 10V) 6.0 m • Halogen-free and RoHS-compliant RDS(ON) (@ VGS = 4.5V) 8.0 m • Ultra-low RDS(ON) • Low Gate Charge • 100% UIS Tested, 100% Rg Tested Applications • Power Managerment in Telecom., Indust...
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JMSL1008AG 100V 6.0m N-Ch Power MOSFET Features Product Summary Parameter Typ. Unit VDS 100 V VGS(th) 1.7 V 93 A • Pb-free Lead Plating ID (@ VGS = 10V) (1) RDS(ON) (@ VGS = 10V) 6.0 m • Halogen-free and RoHS-compliant RDS(ON) (@ VGS = 4.5V) 8.0 m • Ultra-low RDS(ON) • Low Gate Charge • 100% UIS Tested, 100% Rg Tested Applications • Power Managerment in Telecom., Industrial Automation, CE • Current Switching in DC/DC & AC/DC Sub-systems • Motor Driving in Power Tool, E-vehicle, Robotics PDFN5x6-8L Bottom View Type-A Top View Pin Configuration Bottom View Type-B D Top View 1 8 2 7 3 6 4 5 G S Ordering Information Device Package # of Pins Marking MSL TJ (°C) Media Quantity (pcs) JMSL1008AG-13 PDFN5x6-8L 8 SL1008A 1 -55 to 150 13-inch Reel 5000 Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain-to-Source Voltage VDS 100 V Gate-to-Source Voltage VGS ±20 V TC = 25°C Continuous Drain Current (1) 93 ID TC = 100°C Pulsed Drain Current (2) A 54 IDM 210 (3) IAS 45 A Avalanche Energy (3) EAS 101 mJ Avalanche Current Power Dissipation (4) TC = 25°C 104 PD TC = 100°C Junction & Storage Temperature Range -55 to 150 TJ, TSTG °C Gate Charge 25 10 ID = 20A VDS = 50V 20 8 15 6 VGS (V) RDS(ON) (m) W 42 RDS(ON) vs. VGS 10 ID = 13A 4 2 5 0 0 0 5 10 15 20 0 10 VGS (V) Rev. 3.3 A 20 30 40 Qg (nC) JieJie Microelectronics Co., Ltd. All product information are copyrighted and subject to legal disclaimers Page 1 of 5 PDF
Документация на JMSL1008AG-13 

JMSL1008AG_Rev3.3.xlsx

Дата модификации: 27.12.2022

Размер: 289 Кб

5 стр.

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