JMSL1004BG

JIEJIE
JMSL1004BG 100V 3.4m N-Ch Power MOSFET Product Summary Features • Parameter Ultra-low RDS(ON) Value Unit VDS 100 V VGS(th)_Typ 1.7 V • Low Gate Charge • 100% UIS Tested, 100% Rg Tested A Pb-free Lead Plating ID (@ VGS = 10V) RDS(ON)_Typ (@ VGS = 10V) 117 • 3.4 m • Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 4.5V) 4.3 m (1) Applications • Power Managerm...
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JMSL1004BG 100V 3.4m N-Ch Power MOSFET Product Summary Features • Parameter Ultra-low RDS(ON) Value Unit VDS 100 V VGS(th)_Typ 1.7 V • Low Gate Charge • 100% UIS Tested, 100% Rg Tested A Pb-free Lead Plating ID (@ VGS = 10V) RDS(ON)_Typ (@ VGS = 10V) 117 • 3.4 m • Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 4.5V) 4.3 m (1) Applications • Power Managerment in Telecom., Industrial Automation, CE • Motor Driving in Power Tool, E-vehicle, Robotics • Current Switching in DC/DC & AC/DC (SR) Sub-systems PDFN5x6-8L Top View Top View Pin Configuration Bottom View D 1 8 2 7 3 6 4 5 G S Ordering Information Device Package # of Pins Marking MSL TJ (°C) Media Quantity (pcs) JMSL1004BG-13 PDFN5x6-8L 8 SL1004B 1 -55 to 150 13-inch Reel 5000 Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain-to-Source Voltage VDS 100 V Gate-to-Source Voltage VGS ±20 V Continuous Drain Current (1) TC = 25°C 117 ID TC = 100°C A 74 Pulsed Drain Current (2) IDM 420 Avalanche Current (3) IAS 64 A Avalanche Energy (3) EAS 205 mJ Power Dissipation (4) TC = 25°C 104 PD TC = 100°C -55 to 150 RDS(ON) vs. VGS 10 VDS = 50V ID = 20A 16 8 12 6 VGS (V) RDS(ON) (m) °C Gate Charge 20 8 ID = 20A 4 2 4 0 0 2 Rev. 1.4 W 42 TJ, TSTG Junction & Storage Temperature Range A 4 6 VGS (V) 8 10 0 20 JieJie Microelectronics Co., Ltd. All product information are copyrighted and subject to legal disclaimers 40 Qg (nC) 60 80 Page 1 of 5 PDF
Документация на JMSL1004BG-13 

JMSL1004BG_Rev1.4.xlsx

Дата модификации: 27.12.2022

Размер: 325.2 Кб

5 стр.

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