JMSL0609AP

JIEJIE
JMSL0609AP 60V 7.5m N-Ch Power MOSFET Product Summary Features Parameter Value Unit VDS 60 V VGS(th)_Typ 1.7 V 13.6 A • Pb-free Lead Plating ID (@ VGS = 10V) (1) RDS(ON)_Typ (@ VGS = 10V) 7.5 m • Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 4.5V) 9.5 m • Low RDS(ON) • Low Gate Charge • 100% UIS Tested, 100% Rg Tested Applications • Power Management in Computing...
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JMSL0609AP 60V 7.5m N-Ch Power MOSFET Product Summary Features Parameter Value Unit VDS 60 V VGS(th)_Typ 1.7 V 13.6 A • Pb-free Lead Plating ID (@ VGS = 10V) (1) RDS(ON)_Typ (@ VGS = 10V) 7.5 m • Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 4.5V) 9.5 m • Low RDS(ON) • Low Gate Charge • 100% UIS Tested, 100% Rg Tested Applications • Power Management in Computing, CE, IE 4.0, Communications • Current Switching in DC/DC & AC/DC (SR) Sub-systems • Load Switching, Quick/Wireless Charging, Motor Driving SOP-8L Pin Configuration Top View Top View Bottom View D G S Ordering Information Device Package # of Pins Marking MSL TJ (°C) Media Quantity (pcs) JMSL0609AP-13 SOP-8L 8 SL0609A 3 -55 to 150 13-inch Reel 2500 Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain-to-Source Voltage VDS 60 V Gate-to-Source Voltage VGS ±20 V Continuous Drain Current (1) TA = 25°C 13.6 ID TA = 70°C (2) A 10.9 IDM 39 Avalanche Current (3) IAS 26 A Avalanche Energy (3) EAS 34 mJ Pulsed Drain Current Power Dissipation (4) TA = 25°C 3.1 PD TA = 70°C -55 to 150 RDS(ON) vs. VGS °C Gate Charge 50 10 ID = 12A VDS = 30V 40 8 30 6 VGS (V) RDS(ON) (m) W 2.0 TJ, TSTG Junction & Storage Temperature Range A 20 ID = 12A 4 2 10 0 0 0 2 4 6 8 10 0 4 VGS (V) Rev. 1.1 8 12 16 20 Qg (nC) JieJie Microelectronics Co., Ltd. All product information are copyrighted and subject to legal disclaimers Page 1 of 5 PDF
Документация на JMSL0609AP-13 

JMSL0609AP_Rev1.1.xlsx

Дата модификации: 05.09.2022

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