JMSL0609AG

JIEJIE
JMSL0609AG 60V 7.2m N-Ch Power MOSFET Product Summary Features Parameter Value Unit VDS 60 V VGS(th)_Typ 1.5 V 43 A • Pb-free Lead Plating ID (@ VGS = 10V) (1) RDS(ON)_Typ (@ VGS = 10V) 7.2 m • Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 4.5V) 9.0 m • Low RDS(ON) • Low Gate Charge • 100% UIS Tested, 100% Rg Tested Applications • Power Management in Computing, ...
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JMSL0609AG 60V 7.2m N-Ch Power MOSFET Product Summary Features Parameter Value Unit VDS 60 V VGS(th)_Typ 1.5 V 43 A • Pb-free Lead Plating ID (@ VGS = 10V) (1) RDS(ON)_Typ (@ VGS = 10V) 7.2 m • Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 4.5V) 9.0 m • Low RDS(ON) • Low Gate Charge • 100% UIS Tested, 100% Rg Tested Applications • Power Management in Computing, CE, IE 4.0, Communications • Current Switching in DC/DC & AC/DC (SR) Sub-systems • Load Switching, Quick/Wireless Charging, Motor Driving PDFN5x6-8L Top View Pin Configuration Bottom View Top View D 1 8 2 7 3 6 4 5 G S Ordering Information Device Package # of Pins Marking MSL TJ (°C) Media Quantity (pcs) JMSL0609AG-13 PDFN5x6-8L 8 SL0609A 1 -55 to 150 13-inch Reel 5000 Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain-to-Source Voltage VDS 60 V Gate-to-Source Voltage VGS ±20 V Continuous Drain Current (1) TC = 25°C 43 ID TC = 100°C (2) A 27 IDM 156 Avalanche Current (3) IAS 26 A Avalanche Energy (3) EAS 34 mJ Pulsed Drain Current Power Dissipation (4) TC = 25°C 31 PD TC = 100°C -55 to 150 RDS(ON) vs. VGS Gate Charge VDS = 30V ID = 20A 16 8 VGS (V) 12 8 ID = 20A 6 4 2 4 0 0 2 4 6 8 10 0 4 VGS (V) Rev. 1.3 °C 10 20 RDS(ON) (m) W 12.5 TJ, TSTG Junction & Storage Temperature Range A 8 12 16 20 Qg (nC) JieJie Microelectronics Co., Ltd. All product information are copyrighted and subject to legal disclaimers Page 1 of 5 PDF
Документация на JMSL0609AG-13 

JMSL0609AG_Rev1.3.xlsx

Дата модификации: 24.12.2022

Размер: 348.9 Кб

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