JMH65R980AK

JIEJIE
JMH65R980AK 650V SuperJunction Power MOSFET Features Product Summary Extremely Low Gate Charge Parameter Value Unit • Excellent Output Capacitance (Coss) Profile VDS 650 V • Fast Switching Capability VGS(th)_Typ 3.5 V • 100% UIS Tested, 100% Rg Tested 4.0 A • Pb-free Lead Plating ID (@ VGS = 10V) (1) RDS(ON)_Typ (@ VGS = 10V) 900 m • Halogen-free and RoHS-compliant ...
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JMH65R980AK 650V SuperJunction Power MOSFET Features Product Summary Extremely Low Gate Charge Parameter Value Unit • Excellent Output Capacitance (Coss) Profile VDS 650 V • Fast Switching Capability VGS(th)_Typ 3.5 V • 100% UIS Tested, 100% Rg Tested 4.0 A • Pb-free Lead Plating ID (@ VGS = 10V) (1) RDS(ON)_Typ (@ VGS = 10V) 900 m • Halogen-free and RoHS-compliant Eoss@400V 0.68 J • Applications • Telecom / Server Power Supplies • Industrial Power Supplies • UPS / Solar • Lighting / Charger / Adapter TO-252-3L Top View D D G G S S Ordering Information Device Package # of Pins Marking MSL TJ (°C) Media Quantity (pcs) JMH65R980AK-13 TO-252-3L 3 H65R980A 1 -55 to 150 13-inch Reel 2500 Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified) Symbol Value Unit Drain-to-Source Voltage VDS 650 V Gate-to-Source Voltage VGS ±20 V Parameter Continuous Drain Current (1) TC = 25°C 4.0 ID TC = 100°C A 2.4 Pulsed Drain Current (2) IDM 16.0 Avalanche Current (3) IAS 4.0 A Avalanche Energy (3) EAS 80 mJ Power Dissipation (4) TC = 25°C 37 PD TC = 100°C -55 to 150 RDS(ON) vs. VGS Gate Charge VDS = 10V ID = 2.0A 4 8 3 6 VGS (V) RDS(ON) () °C 10 5 2 ID = 2.0A 4 2 1 0 0 0 5 10 15 20 0 3 6 9 12 Qg (nC) VGS (V) Rev 1.2 W 14.7 TJ, TSTG Junction & Storage Temperature Range A Jiangsu JieJie Microelectronics Co., Ltd. All product information are copyrighted and subject to legal disclaimers Page 1 of 5 PDF
Документация на JMH65R980AK 

JMH65R980AK_Rev1.2.xlsx

Дата модификации: 30.01.2023

Размер: 338.6 Кб

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