JMH65R980AFFD

JIEJIE
JMH65R980AFFD 650V SuperJunction Power MOSFET Features Product Summary Extremely Low Gate Charge Parameter Value Unit • Excellent Output Capacitance (Coss) Profile VDS 650 V • Fast Switching Capability VGS(th)_Typ 3.5 V • Fast Recovery 4.0 A • 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) RDS(ON)_Typ (@ VGS = 10V) 895 m • Pb-free Lead Plating Eoss@400V 0.68 ...
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JMH65R980AFFD 650V SuperJunction Power MOSFET Features Product Summary Extremely Low Gate Charge Parameter Value Unit • Excellent Output Capacitance (Coss) Profile VDS 650 V • Fast Switching Capability VGS(th)_Typ 3.5 V • Fast Recovery 4.0 A • 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) RDS(ON)_Typ (@ VGS = 10V) 895 m • Pb-free Lead Plating Eoss@400V 0.68 J • Halogen-free and RoHS-compliant • Applications • Telecom / Server Power Supplies • Industrial Power Supplies • UPS / Solar • Lighting / Charger / Adapter TO-220FP-3L Bottom View Top View D G G D S S D S G Ordering Information Device Package # of Pins Marking MSL TJ (°C) Media Quantity (pcs) JMH65R980AFFD-U TO-220FP-3L 3 H65R980A NA -55 to 150 Tube 50 Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified) Symbol Value Unit Drain-to-Source Voltage VDS 650 V Gate-to-Source Voltage VGS ±20 V Parameter Continuous Drain Current (1) TC = 25°C 4.0 ID TC = 100°C A 2.0 Pulsed Drain Current (2) IDM 18.0 Avalanche Current (3) IAS 3.8 A Avalanche Energy (3) EAS 72 mJ Power Dissipation (4) TC = 25°C 37 PD TC = 100°C -55 to 150 RDS(ON) vs. VGS Gate Charge VDS = 10V ID = 2.5A 4 8 3 6 VGS (V) RDS(ON) () °C 10 5 2 ID = 2.5A 4 2 1 0 0 0 5 10 VGS (V) Rev 1.0 W 14.7 TJ, TSTG Junction & Storage Temperature Range A 15 20 0 3 JieJie Microelectronics Co., Ltd. All product information are copyrighted and subject to legal disclaimers 6 9 12 Qg (nC) Page 1 of 5 PDF
Документация на JMH65R980AFFD 

JMH65R980AFFD_Rev1.0.xlsx

Дата модификации: 04.05.2022

Размер: 316.1 Кб

5 стр.

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