JMH65R430APLN

JIEJIE
JMH65R430APLN 650V SuperJunction Power MOSFET Features Product Summary Parameter Value Unit VDS 650 V VGS(th)_Typ 3.5 V 10.4 A • 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) RDS(ON)_Typ (@ VGS = 10V) 370 m • Pb-free Lead Plating Eoss@400V 2.2 J • Extremely Low Gate Charge • Excellent Output Capacitance (Coss) Profile • Fast Switching Capability • Halogen-free and...
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JMH65R430APLN 650V SuperJunction Power MOSFET Features Product Summary Parameter Value Unit VDS 650 V VGS(th)_Typ 3.5 V 10.4 A • 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) RDS(ON)_Typ (@ VGS = 10V) 370 m • Pb-free Lead Plating Eoss@400V 2.2 J • Extremely Low Gate Charge • Excellent Output Capacitance (Coss) Profile • Fast Switching Capability • Halogen-free and RoHS-compliant Applications • Telecom / Server Power Supplies • Industrial Power Supplies • UPS / Solar • Lighting / Charger / Adapter DFN8080-4L Pin Configuration Top View Bottom View Top View 5 4 3 2 1 Ordering Information Device Package # of Pins Marking MSL TJ (°C) Media Quantity (pcs) JMH65R430APLN-13 DFN8080-4L 4 H65R430A 1 -55 to 150 13-inch Reel 3000 Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified) Symbol Value Unit Drain-to-Source Voltage VDS 650 V Gate-to-Source Voltage VGS ±30 V Parameter TC = 25°C Continuous Drain Current (1) 10.4 ID TC = 100°C Pulsed Drain Current (2) A 6.6 IDM 42 (3) IAS 6.0 A Avalanche Energy (3) EAS 180 mJ Avalanche Current Power Dissipation (4) TC = 25°C 125 PD TC = 100°C Junction & Storage Temperature Range A -55 to 150 TJ, TSTG RDS(ON) vs. VGS °C Gate Charge 10 2000 VDS = 325V ID = 5A 1600 8 1200 6 VGS (V) RDS(ON) (m) W 50 800 400 ID = 5A 4 2 0 0 5 10 VGS (V) Rev. 1.0 15 20 0 0 4 JieJie Microelectronics Co., Ltd. All product information are copyrighted and subject to legal disclaimers 8 12 Qg (nC) 16 20 Page 1 of 6 PDF
Документация на JMH65R430APLN 

JMH65R430APLN_Rev1.0.xlsx

Дата модификации: 05.06.2022

Размер: 348.7 Кб

6 стр.

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