CS14N10A3

CR Micro
Silicon N-Channel Power MOSFET R ○ CS14N10 A3 General Description： VDSS 100 V Enhanced ID 14 A VDMOSFETs, is obtained by the high density Trench PD 43.1 W technology which reduce the conduction loss, improve switching RDS(ON)Typ 113 mΩ CS14N10 A3, the silicon N-channel performance and enhance the avalanche energy. This device is suitable for use as a load switch and P...
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  • Корпус: TO251

Аналоги 3

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Тип Наименование Корпус Упаковка i Карточка
товара
P= CJD80SN10S (JSCJ)
 
TO251
 
P= WMP119N10LG2 (WAYON)
 
TO251
 
P= NCE0117I (NCE)
 
TO251
 

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Silicon N-Channel Power MOSFET R ○ CS14N10 A3 General Description： VDSS 100 V Enhanced ID 14 A VDMOSFETs, is obtained by the high density Trench PD 43.1 W technology which reduce the conduction loss, improve switching RDS(ON)Typ 113 mΩ CS14N10 A3, the silicon N-channel performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-251, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤150 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（TC= 25℃ unless otherwise specified） Symbol Parameter VDSS ID a1 IDM VGS EAS IAS a2 a2 PD Rating Units Drain-to-Source Voltage 100 V Continuous Drain Current 14.0 A Continuous Drain Current T C = 100 °C 8.2 A 56 A Gate-to-Source Voltage ±20 V Avalanche Energy 28.8 mJ Avalanche Current 7.6 A Power Dissipation 43.1 W Derating Factor above 25°C 0.34 W/℃ 150，–55 to 150 ℃ 300 ℃ Pulsed Drain Current TJ，T stg Operating Junction and Storage Temperature Range TL MaximumTemperature for Soldering W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Pag e 1 of 9 2 0 1 7 V0 1 PDF
Документация на CS14N10A3 

CS14N10%20A3[1]

Дата модификации: 17.05.2017

Размер: 456.8 Кб

9 стр.

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