EESX1106
Omron
Photomicrosensor (Transmissive)
EE-SX1106
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
•
•
•
•
Ultra-compact with a slot width of 3 mm.
PCB mounting type.
High resolution with a 0.4-mm-wide aperture.
RoHS Compliant.
■ Absolute Maximum Ratings (Ta = 25°C)
Two, C0.7
Gate
Item
Optical
axis
5.4
5 min.
Emitter
---
Reverse voltage
VR
5V
Collec...
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PA | EE-SX1106 (OMRON) | — | 250 шт |
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Photomicrosensor (Transmissive)
EE-SX1106
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
•
•
•
•
Ultra-compact with a slot width of 3 mm.
PCB mounting type.
High resolution with a 0.4-mm-wide aperture.
RoHS Compliant.
■ Absolute Maximum Ratings (Ta = 25°C)
Two, C0.7
Gate
Item
Optical
axis
5.4
5 min.
Emitter
---
Reverse voltage
VR
5V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
4.5 V
Collector current
IC
30 mA
Collector dissipation
PC
80 mW (see note 1)
Ambient
Operating
temperature
Storage
Topr
–25°C to 85°C
Tstg
–30°C to 85°C
Soldering temperature
Tsol
260°C (see note 2)
Four, 0.2
Two, C0.2
Four, 0.5
Internal Circuit
0
dia
1−0.1
1.4
Terminal No.
0
−0.1 dia
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. Complete soldering within 3 seconds.
Name
A
Anode
K
C
E
Cathode
Collector
Emitter
Rated value
50 mA (see note 1)
IF
Pulse forward current IFP
Detector
Two, R1
Symbol
Forward current
■ Ordering Information
Unless otherwise specified,
the tolerances are ±0.2 mm.
Description
Model
Photomicrosensor (transmissive)
EE-SX1106
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Detector
Symbol
Value
Condition
Forward voltage
VF
1.3 V typ., 1.6 V max.
Reverse current
IR
10 μA max.
IF = 50 mA
VR = 5 V
Peak emission wavelength
λP
950 nm typ.
IF = 50 mA
Light current
IL
0.2 mA min.
IF = 20 mA, VCE = 5 V
Dark current
ID
500 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage VCE (sat)
0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength λP
800 nm typ.
VCE = 5 V
Rising time
tr
10 μs typ.
VCC = 5 V, RL = 100 Ω, IF = 20 mA
Falling time
tf
10 μs typ.
VCC = 5 V, RL = 100 Ω, IF = 20 mA
Photomicrosensor (Transmissive)
EE-SX1106
129
PDF
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