WP7113PD1BT/BD-P22

Kingbright
WP7113PD1BT/BD-P22 Photodiode DESCRIPTION  PACKAGE DIMENSIONS Made with silicon phototransistor chips FEATURES    Mechanically and spectrally matched to the infrared emitting LED lamp Black lens RoHS compliant    Infrared applied systems Optoelectronic switches Photodetector control circuits Sensor technology en  tia l APPLICATIONS C on fid Notes: 1. All dimensions are in ...
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WP7113PD1BT/BD-P22 Photodiode DESCRIPTION  PACKAGE DIMENSIONS Made with silicon phototransistor chips FEATURES    Mechanically and spectrally matched to the infrared emitting LED lamp Black lens RoHS compliant    Infrared applied systems Optoelectronic switches Photodetector control circuits Sensor technology en  tia l APPLICATIONS C on fid Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the leads emerge from the package. 4. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. ABSOLUTE MAXIMUM RATINGS at TA=25°C Parameter Max.Ratings Units 150 mW Operating Temperature -40 to +85 °C Storage Temperature -40 to +85 °C Power Dissipation Lead Soldering Temperature [1] 260°C For 3 Seconds [2] 260°C For 5 Seconds Lead Soldering Temperature Notes: 1. 2mm below package base. 2. 5mm below package base. 3. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity – Ref JEDEC/JESD625-A and JEDEC/J-STD-033. © 2019 Kingbright. All Rights Reserved. Spec No: DSAO8752 / 1101026249 Rev No: V.5 Date: 04/03/2019 Page 1 / 4 PDF
Документация на WP7113PD1BT/BD-P22 

WP7113PD1BT-BD-P22(Ver.5)

Дата модификации: 14.07.2021

Размер: 1.29 Мб

4 стр.

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    KP-3216F3C (KGB)