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Серия защитных диодов SMBJ58

Taiwan Semiconductor

Общие характеристики

 Раздел Защитные диоды
Рассеиваемая мощность
Пиковая рассеиваемая мощность
Рабочее напряжение
Напряжение ограничения (номинальное)
Напряжение ограничения (диапазон)
Максимальное импульсное напряжение
Ток утечки при рабочем напряжении
Максимальный импульсный ток
Количество линий ограничения

Документация на серию SMBJ58

SMBJ SERIES Taiwan Semiconductor 600W, 5V - 170V Surface Mount Transient Voltage Suppressor FEATURES ● ● ● ● ● ● ● ● ● KEY PARAMETERS Ideal for automated placement Glass passivated junction Excellent clamping capability Fast response time: Typically less than 1.0ps Typical IR less than 1μA above 10V Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VWM 5 - 170 V VBR (uni - directional) 6.4 - 231 V VBR (bi - directional) 6.4 - 231 V PPK 600 W APPLICATIONS TJ MAX 150 Package DO-214AA (SMB) Configuration Single die ● Protect sensitive circuit from damage by high voltage transients ● Lighting, ESD transient voltage protection of IC, system ● Inductive switching load protection of IC, system ● Electrical Fast Transient Immunity protection of IC, system MECHANICAL DATA ● ● ● ● ● ● Case: DO-214AA (SMB) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.090g (approximately) DO-214AA (SMB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Non-repetitive peak impulse power dissipation with (1) 10/1000µs waveform Steady state power dissipation at TA = 25°C Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load for Uni-directional only SYMBOL VALUE UNIT PPK 600 W PD 3 W IFSM 100 A Forward Voltage @ IF = 50A for Uni-directional only VF 3.5 / 5.0 V Junction temperature TJ - 55 to +150 °C Storage temperature TSTG - 55 to +150 Notes: 1. Non-repetitive current pulse per Fig.3 and derated above TA = 25°C per Fig.2 2. VF = 3.5V on SMBJ5.0 - SMBJ90 devices and VF = 5.0V on SMBJ100 - SMBJ170 devices °C (2) Devices for Bipolar Applications 1. For bidirectional use C or CA suffix for types SMBJ5.0 - types SMBJ170 2. Electrical characteristics apply in both directions 1 Version: R2104 PDF
Документация на SMBJ100A 

Дата модификации: 09.04.2021

Размер: 456.1 Кб

8 стр.

    Товары серии SMBJ58

    Наименование i Упаковка Корпус Тип
    SMBJ58A (TSC)
     

    SMBJ58A (ONS-FAIR)     		Защитный диод - 3000 шт DO214AA
    SMBJ58AR5G (TSC)
     
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    SMBJ58CA (TSC)
     

    SMBJ58CA/TR7 (YAG)     		3000 шт DO-214AA smb
    SMBJ58CAR5G (TSC)
     
    		—