Серия выпрямительных диодов LBAS316T1

LRC

Общие характеристики

 Раздел Выпрямительные диоды
Корпус SOD323
Схема включения диодов
Максимальное обратное напряжение диода
Прямой ток диода (средний)
Время обратного восстановления диодов
Рабочая температура

Документация на серию LBAS316T1

LESHAN RADIO COMPANY, LTD. High-speed diode LBAS316T1G S-LBAS316T1G DESCRIPTION The LBAS316T1 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD323(SC76) SMD 1 plastic package. FEATURES · Ultra small plastic SMD package · High switching speed: max. 4 ns · Continuous reverse voltage: max. 75 V · Repetitive peak reverse voltage: max. 100 V · Repetitive peak forward current: max. 500 mA. · We declare that the material of product compliance with RoHS requirements. · S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 2 SOD– 323 1 CATHODE 2 ANODE APPLICATIONS · High-speed switching in e.g. surface mounted circuits. ORDERING INFORMATION Device Marking LBAS316T1G S-LBAS316T1G Z9 LBAS316T3G S-LBAS316T3G Z9 Shipping 3000 Tape & Reel 10000 Tape & Reel ELECTRICAL CHARACTERISTICS T j =25°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VF forward voltage see Fig.2 I F = 1 mA I F = 10 mA I F =50 mA I F = 150 mA IR reverse current see Fig.4 V R = 25 V V R =75 V V R = 25 V; T j = 150 °C V R = 75 V; T j = 150 °C; Cd t rr diode capacitance reverse recovery time V fr forward recovery voltage f = 1 MHz; V R = 0; see Fig.5 when switched from I F =10mA to I R = 10mA; R L = 100 Ω; measured at I R = 1 mA; see Fig.6 when switched from IF = 10 mA; tr = 20 ns; see Fig.7 MAX. UNIT 715 855 mV mV 1 1.25 V V 30 1 nA µA 30 50 µA µA 2 4 pF ns 1.75 V Rev.O 1/4 PDF
Документация на LBAS316T1G 

a1

Дата модификации: 12.09.2012

Размер: 231.4 Кб

4 стр.

    Товары серии LBAS316T1

    Наименование i Упаковка
    LBAS316T1G (LRC)