Серия выпрямительных диодов LBAS20HT1

LRC

Общие характеристики

 Раздел Выпрямительные диоды
Корпус SOD323
Схема включения диодов
Максимальное обратное напряжение диода
Прямое падение напряжения
Время обратного восстановления диодов
Рабочая температура

Документация на серию LBAS20HT1

LESHAN RADIO COMPANY, LTD. High Voltage LBAS20HT1G S-LBAS20HT1G Switching Diode z We declare that the material of product compliance with 1 RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 2 SOD– 323 ORDERING INFORMATION 1 CATHODE Device Marking Shipping LBAS20HT1G S-LBAS20HT1G JR 3000/Tape&Reel LBAS20HT3G S-LBAS20HT3G JR 10000/Tape&Reel 2 ANODE MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 200 200 625 Unit Vdc mAdc mAdc Symbol PD Max 200 Unit mW RθJA 1.57 635 mW/°C °C/W TJ, Tstg –55 to+150 °C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board,* TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range *FR–5 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit – – 200 1.0 100 – CD – – – 1000 1250 5.0 pF trr – 50 ns OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150°C) Reverse Breakdown Voltage (IBR = 100 µAdc) Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 Ω) µAdc IR V(BR) VF Vdc mV Rev.O 1/3 PDF
Документация на LBAS20HT1G 

BAS20.p65

Дата модификации: 20.08.2012

Размер: 289.5 Кб

3 стр.

LBAS20HT1G S-LBAS20HT1G High Voltage Switching Diode 1. FEATURES ● We declare that the material of product compliance with SOD323(SC-76) RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 1 CATHODE 2 ANODE 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAS20HT1G JR 3000/Tape&Reel LBAS20HT3G JR 10000/Tape&Reel 3. MAXIMUM RATINGS (Ta = 25°C) Parameter Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF Limits 200 Unit 200 mA 625 mA IFM(surge) V 4.THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation FR–5 Board(Note 1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range 1.FR–5 Minimum Pad Limits Unit 200 mW 1.57 mW/℃ ℃/W ℃ PD RθJA 635 TJ,Tstg -55~+150 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Symbol Min. Typ. Max. IR - - 1 - 100 Reverse Voltage Leakage Current (VR = 200 V) (VR = 200 V, TJ = 150°C) Reverse Breakdown Voltage (IBR = 100 µA) V(BR) V 200 - mV Forward voltage (IF =100mA) VF (IF =200mA) Diode Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 30 mA, RL = 100 Ω) Leshan Radio Company, LTD. Unit µA CD trr Rev.A Jan. 2018 - - 1000 - - 1250 pF - - 5 ns - - 50 1/3 PDF
Документация на LBAS20HT1G 

Дата модификации: 02.01.1970

Размер: 230.5 Кб

3 стр.

    Товары серии LBAS20HT1

    Наименование i Упаковка
    LBAS20HT1G (LRC)