Серия фототранзисторов KP-1608P1

Общие характеристики

	Раздел	Фототранзистор
	λ максимальной чувствительности
	Спектральная область чувствительности
	Поле зрения
	Максимальный ток коллектора

Документация на серию KP-1608P1

KP-1608P1C 1.6 x 0.8 mm Phototransistor DESCRIPTION z PACKAGE DIMENSIONS Made with silicon phototransistor chips FEATURES z z z z z 1.6 mm x 0.8 mm SMD LED, 1.1 mm thickness Mechanically and spectrally matched to infrared emitting LED lamp Package: 2000 pcs / reel Moisture sensitivity level: 3 RoHS compliant APPLICATIONS z z z z Infrared applied systems Optoelectronic switches Photodetector control circuits Sensor technology K g in g i r b t h RECOMMENDED SOLDERING PATTERN (units : mm; tolerance : ± 0.1) Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.1(0.004") unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4. The device has a single mounting surface. The device must be mounted according to the specifications. ABSOLUTE MAXIMUM RATINGS at TA=25°C Parameter Max.Ratings Units Collector-to-Emitter Voltage 30 V Emitter-to-Collector Voltage 5 V 100 mW Operating Temperature -40 to +85 °C Storage Temperature -40 to +85 °C Power Dissipation at(or below) 25°C Free Air Temperature Note: 1. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity – Ref JEDEC/JESD625-A and JEDEC/J-STD-033. © 2019 Kingbright. All Rights Reserved. Spec No: DSAD0327 / 1203000037 Rev No: V.14 Date: 05/06/2019 Page 1 / 4  PDF

Документация на KP-1608P1C 

KP-1608P1C(Ver.14)

Дата модификации: 06.05.2019

Размер: 319.7 Кб

4 стр.

• найти KP-1608P1.pdf

Товары серии KP-1608P1

Наименование	i	Упаковка
KP-1608P1C (KGB)		в ленте 2000 шт