Серия FET транзисторов BLM04N06

Общие характеристики

	Раздел	FET транзисторы
	Конфигурация и полярность
	Максимальное напряжение сток-исток
	Ток стока номинальный при 25°C, без учета ограничений корпуса
	Сопротивление открытого канала (мин)
	Сопротивление открытого канала при диапазоне Uзатв(ном)
	Диапазон номинальных напряжений затвора
	Максимальное напряжение затвора
	Заряд затвора
	Рассеиваемая мощность
	Ёмкость затвора
	Особенности: Special process technology for high ESD capability, High density cell design for lower Rdson, Fully characterized avalanche voltage and current, Good stability and uniformity with high EAS, Excellent package for good heat dissipation, UIS TESTED, DVDS TESTED, Power switching application, Hard switched and High frequency circuits, Uninterruptible power supply
	Корпус	TO-220-3

Документация на серию BLM04N06

Green Product BLM04N06 60V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM04N06 uses advanced trench technology to provide ● VDS = 60V,ID = 150A excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. RDS(ON) < 4.2mΩ @ VGS=10V ● High density cell design for lower Rdson Application ● Fully characterized avalanche voltage and current ●Power switching application ● Good stability and uniformity with high EAS ●Hard switched and High frequency circuits ● Excellent package for good heat dissipation ●Uninterruptible power supply 100% UIS TESTED！ 100% DVDS TESTED！ TO-220 Top View Schematic diagram TO-263 Top View Package Marking And Ordering Information Device Marking Ordering Codes Package Product Code Packing M04N06 BLM04N06-P TO-220 BLM04N06 Tube M04N06 BLM04N06-B TO-263 BLM04N06 Reel Absolute Maximum Ratings (TA=25℃ Parameter unless otherwise noted) Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID (Note 1) Drain Current-Pulsed IDM Maximum Power Dissipation(Tc=25℃) PD (Note 2) Single pulse avalanche energy EAS Operating Junction and Storage Temperature Range TJ,TSTG Limit Unit 60 V ±20 V 150 A 600 A 210 W 1000 mJ -55 To 175 ℃ 0.7 ℃/W Thermal Characteristic Thermal Resistance,Junction-to-Case Page1 RθJC www.belling.com.cn V 1.0  PDF

Документация на BLM04N06-B 

BL N-Channel Enhancement Mode Power MOSFET Keywords:

Дата модификации: 29.07.2020

Размер: 1.11 Мб

8 стр.

• найти BLM04N06.pdf

Товары серии BLM04N06